发明申请
US20100007031A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
有权
用于硅电介质膜的后蚀刻处理的代理，制造半导体器件的方法和半导体器件
- 专利标题： AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 用于硅电介质膜的后蚀刻处理的代理，制造半导体器件的方法和半导体器件
-
申请号： US12560193申请日： 2009-09-15
-
公开(公告)号： US20100007031A1公开(公告)日： 2010-01-14
- 发明人: Yasushi Kobayashi , Kouta Yoshikawa , Yoshihiro Nakata , Tadahiro Imada , Shirou Ozaki
- 申请人： Yasushi Kobayashi , Kouta Yoshikawa , Yoshihiro Nakata , Tadahiro Imada , Shirou Ozaki
- 申请人地址： JP Kawasaki-shi
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki-shi
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/306 ; H01L23/52 ; C09K3/00 ; C08K5/54
摘要：
The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.
公开/授权文献
信息查询
IPC分类:
