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1.发明授权Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device 有权用于硅介电膜的蚀刻后处理剂，半导体器件的制造方法以及半导体器件公开(公告)号：US08716209B2
公开(公告)日：2014-05-06
申请号：US12560193
申请日：2009-09-15
IPC分类号： H01L21/306 , C11D11/00 , H01L21/3105
CPC分类号： C11D11/0047 , C11D3/042 , C11D3/044 , C11D3/162 , C11D3/2075 , C11D3/30 , C11D3/3742 , C11D7/08 , C11D7/265 , C11D7/3209 , H01L21/02063 , H01L21/3105 , H01L21/76807 , H01L21/76814 , H01L21/76826 , H01L24/05 , H01L2224/02166 , H01L2924/14 , H01L2924/00
摘要： The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.
摘要翻译： 本发明提供了一种用于蚀刻后处理硅介电膜的试剂，包括：至少一种选自铵基和胺化合物的含氮物质; 酸; 和含有硅，碳和氢的至少一种含硅化合物。 根据本发明，可以抑制由蚀刻引起的硅电介质膜的介电常数的增加。
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2.发明授权Process for producing silicic coating, silicic coating and semiconductor device 有权硅涂层，硅涂层和半导体器件的生产工艺公开(公告)号：US08431464B2
公开(公告)日：2013-04-30
申请号：US12700215
申请日：2010-02-04
IPC分类号： H01L21/76
CPC分类号： H01L23/53295 , C08G77/20 , C09D183/04 , H01L21/02123 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/02348 , H01L21/31144 , H01L21/3121 , H01L21/3125 , H01L21/3212 , H01L21/76807 , H01L21/76829 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A silicic coating of 2.4 g/cm3 or higher density, obtained by forming a silicic coating precursor with the use of at least one type of silane compound having a photosensitive functional group and thereafter irradiating the silicic coating precursor with at least one type of light. This silicic coating can be used as a novel barrier film or stopper film for semiconductor device.
摘要翻译： 通过使用至少一种具有光敏官能团的硅烷化合物形成硅涂层前体，然后用至少一种类型的光照射硅涂层前体，得到2.4g / cm 3或更高密度的硅质涂层。 这种硅涂层可用作半导体器件的新型阻挡膜或阻挡膜。
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公开(公告)号：US20060042001A1
公开(公告)日：2006-03-02
申请号：US11212095
申请日：2005-08-26
申请人： Tomoaki Takada , Kouta Yoshikawa , Kazuhiko Kuroda
发明人： Tomoaki Takada , Kouta Yoshikawa , Kazuhiko Kuroda
IPC分类号： A45D19/00
摘要： The barber/beauty chair of the present invention aims at achieving the above-described object and there is provided a barber/beauty chair comprising: a chair mounting member mounted on a base through elevation means; a chair mounted on the chair mounting member; and a shampoo bowl mounted on the side of a back rest of the chair on the chair mounting member.
摘要翻译： 本发明的理发/美容椅旨在实现上述目的，并且提供了一种理发/美容椅，其包括：椅子安装构件，其通过升降装置安装在基座上; 安装在椅子安装构件上的椅子; 以及安装在椅子安装构件上的椅子的靠背侧的洗发水碗。
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公开(公告)号：US08404584B2
公开(公告)日：2013-03-26
申请号：US13098735
申请日：2011-05-02
申请人： Tadahiro Imada , Kouta Yoshikawa
发明人： Tadahiro Imada , Kouta Yoshikawa
IPC分类号： H01L21/44
CPC分类号： H01L21/76826 , H01L21/3105 , H01L21/76807 , H01L21/76825 , H01L21/76828 , H01L21/76829
摘要： The method of manufacturing the semiconductor device includes forming an insulating film above a semiconductor substrate, forming an opening in the insulating film, forming a conductive film above the insulating film with the opening formed, removing the conductive film above the insulating film to bury the conductive film in the opening, and processing a surface of the insulating film with a silicon compound including Si—N or Si—Cl.
摘要翻译： 半导体器件的制造方法包括在半导体衬底上形成绝缘膜，在绝缘膜上形成开口，在形成有开口的绝缘膜上形成导电膜，除去绝缘膜上方的导电膜以埋置导电 膜，并且用包括Si-N或Si-Cl的硅化合物处理绝缘膜的表面。
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公开(公告)号：US20110207319A1
公开(公告)日：2011-08-25
申请号：US13098735
申请日：2011-05-02
申请人： Tadahiro Imada , Kouta Yoshikawa
发明人： Tadahiro Imada , Kouta Yoshikawa
IPC分类号： H01L21/768
CPC分类号： H01L21/76826 , H01L21/3105 , H01L21/76807 , H01L21/76825 , H01L21/76828 , H01L21/76829
摘要： The method of manufacturing the semiconductor device includes forming an insulating film above a semiconductor substrate, forming an opening in the insulating film, forming a conductive film above the insulating film with the opening formed, removing the conductive film above the insulating film to bury the conductive film in the opening, and processing a surface of the insulating film with a silicon compound including Si—N or Si—Cl.
摘要翻译： 半导体器件的制造方法包括在半导体衬底上形成绝缘膜，在绝缘膜上形成开口，在形成有开口的绝缘膜上形成导电膜，除去绝缘膜上方的导电膜以埋置导电 膜，并且用包括Si-N或Si-Cl的硅化合物处理绝缘膜的表面。
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6.发明申请AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权用于硅电介质膜的后蚀刻处理的代理，制造半导体器件的方法和半导体器件公开(公告)号：US20100007031A1
公开(公告)日：2010-01-14
申请号：US12560193
申请日：2009-09-15
IPC分类号： H01L23/48 , H01L21/306 , H01L23/52 , C09K3/00 , C08K5/54
CPC分类号： C11D11/0047 , C11D3/042 , C11D3/044 , C11D3/162 , C11D3/2075 , C11D3/30 , C11D3/3742 , C11D7/08 , C11D7/265 , C11D7/3209 , H01L21/02063 , H01L21/3105 , H01L21/76807 , H01L21/76814 , H01L21/76826 , H01L24/05 , H01L2224/02166 , H01L2924/14 , H01L2924/00
摘要： The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.
摘要翻译： 本发明提供了一种用于蚀刻后处理硅介电膜的试剂，包括：至少一种选自铵基和胺化合物的含氮物质; 酸; 和含有硅，碳和氢的至少一种含硅化合物。 根据本发明，可以抑制由蚀刻引起的硅电介质膜的介电常数的增加。
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7.发明申请INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权界面粗糙度降低膜，接线层，半导体器件及制造半导体器件的方法公开(公告)号：US20090085170A1
公开(公告)日：2009-04-02
申请号：US12238056
申请日：2008-09-25
CPC分类号： H01L21/76831 , H01L21/3105 , H01L21/3205 , Y10T428/24802
摘要： An interfacial roughness reducing film which is in contact, on one side thereof, with an insulating film and in contact, on a side opposite from the one side, with wiring comprises a Si—O bond, and is formed using a composition containing a silicon compound that comprises at least one bond of Si—N bonds and Si—Cl bonds wherein the number of Si—N bonds and Si—Cl bonds combined per molecule of the compound is at least two. An interfacial roughness between the interfacial roughness reducing film and the wiring is smaller than that between the interfacial roughness reducing film and the insulating film.
摘要翻译： 在一侧与绝缘膜在一侧相对的一侧与布线接触的界面粗糙度降低膜包括Si-O键，并且使用含有硅的组合物形成 包含Si-N键和Si-Cl键至少一个键的化合物，其中每分子化合物合并的Si-N键和Si-Cl键的数目为至少两个。 界面粗糙度降低膜和布线之间的界面粗糙度小于界面粗糙度降低膜和绝缘膜之间的界面粗糙度。
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8.发明授权Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device 有权界面粗糙度降低膜，布线层，半导体器件以及半导体器件的制造方法公开(公告)号：US08164166B2
公开(公告)日：2012-04-24
申请号：US12238056
申请日：2008-09-25
CPC分类号： H01L21/76831 , H01L21/3105 , H01L21/3205 , Y10T428/24802
摘要： An interfacial roughness reducing film which is in contact, on one side thereof, with an insulating film and in contact, on a side opposite from the one side, with wiring comprises a Si—O bond, and is formed using a composition containing a silicon compound that comprises at least one bond of Si—N bonds and Si—Cl bonds wherein the number of Si—N bonds and Si—Cl bonds combined per molecule of the compound is at least two. An interfacial roughness between the interfacial roughness reducing film and the wiring is smaller than that between the interfacial roughness reducing film and the insulating film.
摘要翻译： 在一侧与绝缘膜在一侧相对的一侧与布线接触的界面粗糙度降低膜包括Si-O键，并且使用含有硅的组合物形成 包含Si-N键和Si-Cl键至少一个键的化合物，其中每分子化合物合并的Si-N键和Si-Cl键的数目为至少两个。 界面粗糙度降低膜和布线之间的界面粗糙度小于界面粗糙度降低膜和绝缘膜之间的界面粗糙度。
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9.发明申请公开(公告)号：US20100133692A1
公开(公告)日：2010-06-03
申请号：US12700215
申请日：2010-02-04
IPC分类号： H01L23/48 , H01L21/3205 , C09D7/00
CPC分类号： H01L23/53295 , C08G77/20 , C09D183/04 , H01L21/02123 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/02348 , H01L21/31144 , H01L21/3121 , H01L21/3125 , H01L21/3212 , H01L21/76807 , H01L21/76829 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A silicic coating of 2.4 g/cm3 or higher density, obtained by forming a silicic coating precursor with the use of at least one type of silane compound having a photosensitive functional group and thereafter irradiating the silicic coating precursor with at least one type of light. This silicic coating can be used as a novel barrier film or stopper film for semiconductor device.
摘要翻译： 通过使用至少一种具有光敏官能团的硅烷化合物形成硅涂层前体，然后用至少一种类型的光照射硅涂层前体，得到2.4g / cm 3或更高密度的硅质涂层。 这种硅涂层可用作半导体器件的新型阻挡膜或阻挡膜。
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