公开(公告)号：US08431464B2

公开(公告)日：2013-04-30

申请号：US12700215

申请日：2010-02-04

申请人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

IPC分类号： H01L21/76

CPC分类号： H01L23/53295 ,  C08G77/20 ,  C09D183/04 ,  H01L21/02123 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/3125 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A silicic coating of 2.4 g/cm3 or higher density, obtained by forming a silicic coating precursor with the use of at least one type of silane compound having a photosensitive functional group and thereafter irradiating the silicic coating precursor with at least one type of light. This silicic coating can be used as a novel barrier film or stopper film for semiconductor device.

摘要翻译： 通过使用至少一种具有光敏官能团的硅烷化合物形成硅涂层前体，然后用至少一种类型的光照射硅涂层前体，得到2.4g / cm 3或更高密度的硅质涂层。 这种硅涂层可用作半导体器件的新型阻挡膜或阻挡膜。

公开(公告)号：US20100007031A1

公开(公告)日：2010-01-14

申请号：US12560193

申请日：2009-09-15

申请人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

IPC分类号： H01L23/48 ,  H01L21/306 ,  H01L23/52 ,  C09K3/00 ,  C08K5/54

CPC分类号： C11D11/0047 ,  C11D3/042 ,  C11D3/044 ,  C11D3/162 ,  C11D3/2075 ,  C11D3/30 ,  C11D3/3742 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/14 ,  H01L2924/00

摘要： The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

摘要翻译： 本发明提供了一种用于蚀刻后处理硅介电膜的试剂，包括：至少一种选自铵基和胺化合物的含氮物质; 酸; 和含有硅，碳和氢的至少一种含硅化合物。 根据本发明，可以抑制由蚀刻引起的硅电介质膜的介电常数的增加。

公开(公告)号：US20100133692A1

公开(公告)日：2010-06-03

申请号：US12700215

申请日：2010-02-04

申请人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

IPC分类号： H01L23/48 ,  H01L21/3205 ,  C09D7/00

CPC分类号： H01L23/53295 ,  C08G77/20 ,  C09D183/04 ,  H01L21/02123 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/3125 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A silicic coating of 2.4 g/cm3 or higher density, obtained by forming a silicic coating precursor with the use of at least one type of silane compound having a photosensitive functional group and thereafter irradiating the silicic coating precursor with at least one type of light. This silicic coating can be used as a novel barrier film or stopper film for semiconductor device.

摘要翻译： 通过使用至少一种具有光敏官能团的硅烷化合物形成硅涂层前体，然后用至少一种类型的光照射硅涂层前体，得到2.4g / cm 3或更高密度的硅质涂层。 这种硅涂层可用作半导体器件的新型阻挡膜或阻挡膜。

公开(公告)号：US08716209B2

公开(公告)日：2014-05-06

申请号：US12560193

申请日：2009-09-15

申请人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

发明人： Yasushi Kobayashi ,  Kouta Yoshikawa ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Shirou Ozaki

IPC分类号： H01L21/306 ,  C11D11/00 ,  H01L21/3105

CPC分类号： C11D11/0047 ,  C11D3/042 ,  C11D3/044 ,  C11D3/162 ,  C11D3/2075 ,  C11D3/30 ,  C11D3/3742 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/14 ,  H01L2924/00

摘要： The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

摘要翻译： 本发明提供了一种用于蚀刻后处理硅介电膜的试剂，包括：至少一种选自铵基和胺化合物的含氮物质; 酸; 和含有硅，碳和氢的至少一种含硅化合物。 根据本发明，可以抑制由蚀刻引起的硅电介质膜的介电常数的增加。

公开(公告)号：US20100320618A1

公开(公告)日：2010-12-23

申请号：US12862140

申请日：2010-08-24

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Yasushi Kobayashi

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Yasushi Kobayashi

IPC分类号： H01L23/48 ,  H01L21/768 ,  B32B9/04

CPC分类号： H01L23/5329 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

摘要： An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: Si—CXHY—Si  General Formula (1) where X is equal to 2Y and is an integer of 1 or more.

摘要翻译： 一种互连基板，包括：由硅化合物制成的第一绝缘膜，形成在第一绝缘膜上的粘合增强层和形成在粘合增强层上的由硅化合物制成的第二绝缘膜，其中第一绝缘膜和 第二绝缘膜与具有下述通式（1）表示的结构的成分组合在一起，其中X等于2Y，为1以上的整数的Si-CXHY-Si通式（1）。

公开(公告)号：US08390099B2

公开(公告)日：2013-03-05

申请号：US12862140

申请日：2010-08-24

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Yasushi Kobayashi

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Yasushi Kobayashi

IPC分类号： H01L23/58

CPC分类号： H01L23/5329 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

摘要： An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: Si—CXHY—Si  General Formula (1) where y is equal to 2x and is an even integer.

摘要翻译： 一种互连基板，包括：由硅化合物制成的第一绝缘膜，形成在第一绝缘膜上的粘合增强层和形成在粘合增强层上的由硅化合物制成的第二绝缘膜，其中第一绝缘膜和 第二绝缘膜与具有下述通式（1）所示结构的成分组合在一起：Si-CXHY-Si通式（1），其中y等于2×并且是偶数整数。

公开(公告)号：US20090085170A1

公开(公告)日：2009-04-02

申请号：US12238056

申请日：2008-09-25

申请人： Tadahiro Imada ,  Yoshihiro Nakata ,  Kouta Yoshikawa

发明人： Tadahiro Imada ,  Yoshihiro Nakata ,  Kouta Yoshikawa

IPC分类号： H01L23/58 ,  B32B3/10 ,  H01L21/31

CPC分类号： H01L21/76831 ,  H01L21/3105 ,  H01L21/3205 ,  Y10T428/24802

摘要： An interfacial roughness reducing film which is in contact, on one side thereof, with an insulating film and in contact, on a side opposite from the one side, with wiring comprises a Si—O bond, and is formed using a composition containing a silicon compound that comprises at least one bond of Si—N bonds and Si—Cl bonds wherein the number of Si—N bonds and Si—Cl bonds combined per molecule of the compound is at least two. An interfacial roughness between the interfacial roughness reducing film and the wiring is smaller than that between the interfacial roughness reducing film and the insulating film.

摘要翻译： 在一侧与绝缘膜在一侧相对的一侧与布线接触的界面粗糙度降低膜包括Si-O键，并且使用含有硅的组合物形成 包含Si-N键和Si-Cl键至少一个键的化合物，其中每分子化合物合并的Si-N键和Si-Cl键的数目为至少两个。 界面粗糙度降低膜和布线之间的界面粗糙度小于界面粗糙度降低膜和绝缘膜之间的界面粗糙度。

公开(公告)号：US08164166B2

公开(公告)日：2012-04-24

申请号：US12238056

申请日：2008-09-25

申请人： Tadahiro Imada ,  Yoshihiro Nakata ,  Kouta Yoshikawa

发明人： Tadahiro Imada ,  Yoshihiro Nakata ,  Kouta Yoshikawa

IPC分类号： H01L23/58 ,  H01L21/31 ,  B32B3/10

CPC分类号： H01L21/76831 ,  H01L21/3105 ,  H01L21/3205 ,  Y10T428/24802

摘要： An interfacial roughness reducing film which is in contact, on one side thereof, with an insulating film and in contact, on a side opposite from the one side, with wiring comprises a Si—O bond, and is formed using a composition containing a silicon compound that comprises at least one bond of Si—N bonds and Si—Cl bonds wherein the number of Si—N bonds and Si—Cl bonds combined per molecule of the compound is at least two. An interfacial roughness between the interfacial roughness reducing film and the wiring is smaller than that between the interfacial roughness reducing film and the insulating film.

摘要翻译： 在一侧与绝缘膜在一侧相对的一侧与布线接触的界面粗糙度降低膜包括Si-O键，并且使用含有硅的组合物形成 包含Si-N键和Si-Cl键至少一个键的化合物，其中每分子化合物合并的Si-N键和Si-Cl键的数目为至少两个。 界面粗糙度降低膜和布线之间的界面粗糙度小于界面粗糙度降低膜和绝缘膜之间的界面粗糙度。

公开(公告)号：US08461041B2

公开(公告)日：2013-06-11

申请号：US12955525

申请日：2010-11-29

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

IPC分类号： H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L23/485 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.

摘要翻译： 制造半导体器件的方法包括：形成硅化合物基绝缘膜的绝缘膜; 在所述绝缘膜上形成开口，在含有烃气体的气氛中施加活性能量束，形成结晶SiC的阻挡层，并且在所述开口中形成所述阻挡层中的铜的互连结构。

公开(公告)号：US20110068471A1

公开(公告)日：2011-03-24

申请号：US12955525

申请日：2010-11-29

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L23/485 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.

摘要翻译： 制造半导体器件的方法包括：形成硅化合物基绝缘膜的绝缘膜; 在绝缘膜上形成开口，在含有烃气体的气氛中施加活性能量束，形成结晶SiC的阻挡层，并在形成有阻挡层的开口中形成铜的互连结构。