发明申请
- 专利标题： DUAL-DAMASCENE PROCESS TO FABRICATE THICK WIRE STRUCTURE
- 专利标题（中）： 双面加工工艺制作厚度很大的结构
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申请号： US12564482申请日： 2009-09-22
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公开(公告)号： US20100009509A1公开(公告)日： 2010-01-14
- 发明人: Douglas D. Coolbaugh , Keith E. Downes , Peter J. Lindgren , Anthony K. Stamper
- 申请人： Douglas D. Coolbaugh , Keith E. Downes , Peter J. Lindgren , Anthony K. Stamper
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A method and semiconductor device. In the method, at least one partial via is etched in a stacked structure and a border is formed about the at least one partial via. The method further includes performing thick wiring using selective etching while continuing via etching to at least one etch stop layer.
公开/授权文献
- US08236663B2 Dual-damascene process to fabricate thick wire structure 公开/授权日：2012-08-07
信息查询
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