发明申请
- 专利标题： INTERCONNECT STRUCTURES FOR INTEGRATION OF MULTI-LAYERED INTEGRATED CIRCUIT DEVICES AND METHODS FOR FORMING THE SAME
- 专利标题（中）： 用于集成多层集成电路装置的互连结构及其形成方法
-
申请号： US12174393申请日： 2008-07-16
-
公开(公告)号： US20100013107A1公开(公告)日： 2010-01-21
- 发明人: Gurtej S. Sandhu , Nishant Sinha , John A. Smythe
- 申请人： Gurtej S. Sandhu , Nishant Sinha , John A. Smythe
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/4763
摘要：
Semiconductor devices comprise at least one integrated circuit layer, at least one conductive trace and an insulative material adjacent at least a portion of the at least one conductive trace. At least one interconnect structure extends through a portion of the at least one conductive trace and a portion of the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace which differs from a transverse cross-sectional dimension through the insulative material. Methods of forming semiconductor devices comprising at least one interconnect structure are also disclosed.