发明申请
- 专利标题： METHOD FOR FORMING SRTIO3 FILM AND STORAGE MEDIUM
- 专利标题（中）： 形成SRTIO3薄膜和储存介质的方法
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申请号： US12529356申请日： 2008-02-27
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公开(公告)号： US20100015335A1公开(公告)日： 2010-01-21
- 发明人: Akinobu Kakimoto , Yumiko Kawano
- 申请人： Akinobu Kakimoto , Yumiko Kawano
- 申请人地址： JP Minato-ku
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2007-051374 20070301
- 国际申请： PCT/JP08/53391 WO 20080227
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; C23C16/455
摘要：
A substrate is arranged in a processing chamber, the substrate is heated, and an Sr material, a Ti material and an oxidizing agent are introduced into the processing chamber in the form of gas, the gases are reacted on the heated substrate, and an SrTiO3 film is formed on the substrate. As the Sr material, an Sr amine compound or an Sr imine compound is used.
公开/授权文献
- US08361550B2 Method for forming SrTiO3 film and storage medium 公开/授权日：2013-01-29
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