发明申请
- 专利标题： PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 相变存储器件及其制造方法
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申请号： US12574783申请日： 2009-10-07
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公开(公告)号： US20100019217A1公开(公告)日： 2010-01-28
- 发明人: Du-eung Kim , Chang-soo Lee , Woo-yeong Cho , Byung-gil Choi
- 申请人： Du-eung Kim , Chang-soo Lee , Woo-yeong Cho , Byung-gil Choi
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR20050098191 20051018
- 主分类号： H01L47/00
- IPC分类号： H01L47/00 ; H01L21/06
摘要：
A phase-change memory device includes a semiconductor substrate, a bit line and a word line arranged on the semiconductor substrate to intersect each other, and a phase-change material strip interposed between the bit line and the word line and extending lengthwise in a direction that is substantially parallel to at least a portion of the word line.
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