发明申请
US20100019239A1 METHOD OF FABRICATING ZTO THIN FILM, THIN FILM TRANSISTOR EMPLOYING THE SAME, AND METHOD OF FABRICATING THIN FILM TRANSISTOR
审中-公开
制造ZTO薄膜的方法，使用该薄膜的薄膜晶体管以及制造薄膜晶体管的方法
- 专利标题： METHOD OF FABRICATING ZTO THIN FILM, THIN FILM TRANSISTOR EMPLOYING THE SAME, AND METHOD OF FABRICATING THIN FILM TRANSISTOR
- 专利标题（中）： 制造ZTO薄膜的方法，使用该薄膜的薄膜晶体管以及制造薄膜晶体管的方法
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申请号： US12359149申请日： 2009-01-23
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公开(公告)号： US20100019239A1公开(公告)日： 2010-01-28
- 发明人: Woo Seok Cheong , Sung Min Yoon , Jae Heon Shin , Chi Sun Hwang
- 申请人： Woo Seok Cheong , Sung Min Yoon , Jae Heon Shin , Chi Sun Hwang
- 申请人地址： KR Daejeon
- 专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2008-0071769 20080723; KR10-2008-0113381 20081114
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/20
摘要：
Provided are a method of fabricating a zinc-tin-oxide (ZTO) thin film, a thin film transistor employing the same, and a method of fabricating a thin film transistor. The method of fabricating a ZTO thin film includes depositing zinc oxide and tin oxide at a deposition temperature of 450° C. or lower so that a zinc-to-tin atomic ratio is 4:1 or greater, to form an amorphous ZTO thin film. In the thin film transistor, the ZTO thin film is used as a channel layer.
公开/授权文献
- US2628391A Window construction 公开/授权日：1953-02-17
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