发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12507735申请日： 2009-07-22
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公开(公告)号： US20100019342A1公开(公告)日： 2010-01-28
- 发明人: Ryouichi KAWANO , Tomoyuki YAMAZAKI , Michio NEMOTO , Mituhiro KAKEFU
- 申请人： Ryouichi KAWANO , Tomoyuki YAMAZAKI , Michio NEMOTO , Mituhiro KAKEFU
- 申请人地址： JP Tokyo
- 专利权人： Fuji Electric Device Technology Co., Ltd.
- 当前专利权人： Fuji Electric Device Technology Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 优先权： JPPA2008-188613 20080722
- 主分类号： H01L29/861
- IPC分类号： H01L29/861
摘要：
In a semiconductor device having a pn-junction diode structure that includes anode diffusion region including edge area, anode electrode on anode diffusion region, and insulator film on edge area of anode diffusion region, the area of anode electrode above anode diffusion region with insulator film interposed between anode electrode and anode diffusion region is narrower than the area of insulator film on edge area of anode diffusion region.
公开/授权文献
- US08178941B2 Semiconductor device 公开/授权日：2012-05-15
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