发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12511285申请日： 2009-07-29
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公开(公告)号： US20100025678A1公开(公告)日： 2010-02-04
- 发明人: Shunpei YAMAZAKI , Hidekazu MIYAIRI , Kengo AKIMOTO , Kojiro SHIRAISHI
- 申请人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Kengo AKIMOTO , Kojiro SHIRAISHI
- 优先权： JP2008-197145 20080731
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/22 ; H01L21/336
摘要：
It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.
公开/授权文献
- US08129717B2 Semiconductor device and method for manufacturing the same 公开/授权日：2012-03-06
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