发明申请
- 专利标题: Semiconductor device and fabrication method thereof
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12461051申请日: 2009-07-30
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公开(公告)号: US20100025710A1公开(公告)日: 2010-02-04
- 发明人: Shigeru Yamada , Makoto Terui , Yoshimi Egawa , Shinji Ohuchi
- 申请人: Shigeru Yamada , Makoto Terui , Yoshimi Egawa , Shinji Ohuchi
- 申请人地址: JP Tokyo
- 专利权人: OKI SEMICONDUCTOR CO., LTD.
- 当前专利权人: OKI SEMICONDUCTOR CO., LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-200010 20080801
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
There is provided a semiconductor device including: a semiconductor chip having a penetrating electrode penetrating through from a first main surface of the semiconductor chip to a second main surface on the opposite side thereof, a photoreceptor portion formed on the first main surface, and a first wire at a periphery of the photoreceptor portion; a light transmitting chip adhered to the first main surface at the periphery of the light transmitting chip, with a bonding layer interposed between the light transmitting chip and the first main surface, the light transmitting chip covering the light transmitting chip; and a light blocking resin layer formed only on the side surfaces of the light transmitting chip and the bonding layer.
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