摘要:
A method of manufacturing a semiconductor device which can reduce the number of times of resin-injection, thereby facilitating the miniaturization of the semiconductor device, and the semiconductor device. After resin is injected into a space between at least two second semiconductor chips flip-chip joined to a first semiconductor chip through an injection opening, the resin is hardened.
摘要:
A semiconductor package according to the present invention includes a substrate; first and second semiconductor chips mounted on a first surface of the substrate; and a heat-radiation sheet. The heat-radiation sheet includes a heat-transferable conductive layer and first and second insulating layers formed on top and bottom surfaces of the heat-transferable conductive layer, respectively. The heat-radiation sheet includes a first portion arranged between the first semiconductor chip and the second semiconductor chip; and a second portion extending at least a side of the first portion. The second portion is connected to the substrate. The second insulating layer of the second portion is formed to expose a part of the heat-transferable conductive layer.
摘要:
There is provided a method of manufacturing a camera module including a sensor package having an image pickup element, and a lens configuration in which a lens holder, and a receptacle accommodating the sensor package are integrally formed, the sensor package being fixed within the receptacle, the method including: applying a photo-curing resin to predetermined portions of the receptacle; performing alignment of a relative position of the sensor package to the lens configuration; a first joining whereby the photo-curing resin is cured so that the sensor package is fixed within the receptacle while maintaining the relative position of the sensor package to the lens configuration; and a second joining whereby a thermosetting resin is applied so as to fill a space formed between the sensor package and the lens configuration, and then curing the thermosetting resin.
摘要:
According to this invention, a method for fabricating a semiconductor package, in which a plurality of semiconductor chips having a through electrode is layered on a semiconductor interposer, comprising: mounting and layering a plurality of semiconductor chips on a first surface of a semiconductor wafer, which is to be used for a semiconductor interposer; forming a mold resin over the semiconductor chips to cover the semiconductor chips entirely; and dicing the semiconductor wafer to form a plurality of individual semiconductor packages.
摘要:
A multi chip package includes a substrate; a first semiconductor chip mounted on the substrate; a second semiconductor chip mounted above the first semiconductor chip; a first bonding wire electrically coupled to a first bonding pad on the first semiconductor chip; and a second bonding wire electrically coupled to a second bonding pad on the second semiconductor chip. At least the first bonding wire is of a coated wire, which comprises a conductive core and an outer insulation coating. At least the first bonding pad is of a multi layered pad, comprising a base pad formed on the first semiconductor chip; a first conductive layer formed on the base pad; and a second conductive layer formed on the first conductive layer.
摘要:
A semiconductor package according to the present invention includes a substrate; first and second semiconductor chips mounted on a first surface of the substrate; and a heat-radiation sheet. The heat-radiation sheet includes a heat-transferable conductive layer and first and second insulating layers formed on top and bottom surfaces of the heat-transferable conductive layer, respectively. The heat-radiation sheet includes a first portion arranged between the first semiconductor chip and the second semiconductor chip; and a second portion extending at least a side of the first portion. The second portion is connected to the substrate. The second insulating layer of the second portion is formed to expose a part of the heat-transferable conductive layer.
摘要:
A method for manufacturing a semiconductor device includes the steps of (a) preparing a wafer including a first circuit formation region and a first surrounding region, (b) laminating a first chip on the first circuit formation region, (c) pouring a first underfill into a first space between the first circuit formation region and the first chip from the first surrounding region, (d) hardening the first underfill, (e) forming a laminated structure comprised of a first chip block that includes a second chip including the first circuit formation region, the first chip, and the first underfill by conducting dicing with respect to the wafer; and (f) laminating the laminated structure on a substrate.
摘要:
A semiconductor device includes a substrate, and a recess is formed in the substrate. A back surface of the substrate is covered with an insulating film, and wiring, pads and posts are formed on the insulating film. The pads are connected to the posts by the wiring. The entire back surface of the substrate except for areas of the pads and the posts is covered with the insulating film. External terminals, such as solder balls, are formed on the posts. A first chip is fixed to the pads within the recess, and a second chip is adhered to the first chip with an adhesive. The first chip and the second chip respectively have a wafer level chip size package (WCSP) structure where external terminals are arranged planarly by rewiring from internal electrodes which are provided with an insulating coating.
摘要:
A semiconductor device includes a substrate, and a recess is formed in the substrate. A back surface of the substrate is covered with an insulating film, and wiring, pads and posts are formed on the insulating film. The pads are connected to the posts by the wiring. The entire back surface of the substrate except for areas of the pads and the posts is covered with the insulating film. External terminals, such as solder balls, are formed on the posts. A first chip is fixed to the pads within the recess, and a second chip is adhered to the first chip with an adhesive. The first chip and the second chip respectively have a wafer level chip size package (WCSP) structure where external terminals are arranged planarly by rewiring from internal electrodes which are provided with an insulating coating.
摘要:
A first adhesive tape is attached to a first major surface of a semiconductor wafer, the semiconductor wafer having a plurality of semiconductor chip regions. Protrusion electrodes are formed on a second major surface of the semiconductor wafer within the plurality of semiconductor chip regions. Portions of the semiconductor wafer located between the plurality of chip regions are removed to form a plurality of semiconductor chips. Intervals between the semiconductor chips are then expanded. Respective first major surfaces of the wiring substrates are coupled to the corresponding second major surfaces of the semiconductor chips by the protrusion electrodes to form preliminarily structures each of which is comprised of the semiconductor chip and the wiring substrate. A second adhesive tape is attached to second major surfaces of the wiring substrates. The first adhesive tape is removed from the semiconductor chips. A resin is applied to gaps between the semiconductor chips and the wiring substrates, and the second adhesive tape is removed from the wiring substrates to form the semiconductor devices.