发明申请
- 专利标题： CHARGE TRAP TYPE NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 充电陷阱型非易失性存储器件及其制造方法
-
申请号： US12432060申请日： 2009-04-29
-
公开(公告)号： US20100025752A1公开(公告)日： 2010-02-04
- 发明人: Cha-Deok Dong
- 申请人： Cha-Deok Dong
- 申请人地址： KR Icheon-si
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Icheon-si
- 优先权： KR10-2008-0074139 20080729
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/28
摘要：
There is provided a charge trap type non-volatile memory device and a method for fabricating the same, the charge trap type non-volatile memory device including: a tunnel insulation layer formed over a substrate; a charge trap layer formed over the tunnel insulation layer, the charge trap layer including a charge trap polysilicon thin layer and a charge trap nitride-based layer; a charge barrier layer formed over the charge trap layer; a gate electrode formed over the charge barrier layer; and an oxide-based spacer formed over sidewalls of the charge trap layer and provided to isolate the charge trap layer.
公开/授权文献
信息查询
IPC分类:
