发明申请
US20100026335A1 LEAK CURRENT DETECTION CIRCUIT, BODY BIAS CONTROL CIRCUIT, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE TESTING METHOD
有权
漏电流检测电路，体位偏置控制电路，半导体器件和半导体器件测试方法
- 专利标题： LEAK CURRENT DETECTION CIRCUIT, BODY BIAS CONTROL CIRCUIT, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE TESTING METHOD
- 专利标题（中）： 漏电流检测电路，体位偏置控制电路，半导体器件和半导体器件测试方法
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申请号： US12576670申请日： 2009-10-09
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公开(公告)号： US20100026335A1公开(公告)日： 2010-02-04
- 发明人: Kiyonaga Fujii , Yasushige Ogawa
- 申请人： Kiyonaga Fujii , Yasushige Ogawa
- 申请人地址： JP Tokyo
- 专利权人： FUJITSU MICROELECTRONICS LIMITED
- 当前专利权人： FUJITSU MICROELECTRONICS LIMITED
- 当前专利权人地址： JP Tokyo
- 主分类号： G01R31/26
- IPC分类号： G01R31/26 ; H01H31/12
摘要：
A leak current detection circuit that improves the accuracy for detecting a leak current in a MOS transistor without enlarging the circuit scale. The leak current detection circuit includes at least one P-channel MOS transistor which is coupled to a high potential power supply and which is normally inactivated and generates a first leak current, at least one N-channel MOS transistor which is coupled between a low potential power and at least the one P-channel MOS transistor and which is normally inactivated and generates a second leak current, and a detector which detects a potential generated at a node between the at least one P-channel MOS transistor and the at least one N-channel MOS transistor in accordance with the first and second leak currents.
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