发明申请
- 专利标题: Semiconductor device for charge pumping
- 专利标题(中): 用于电荷泵浦的半导体器件
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申请号: US12458533申请日: 2009-07-15
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公开(公告)号: US20100026373A1公开(公告)日: 2010-02-04
- 发明人: Joung-Yeal Kim , Young-hyun Jun , Bai-sun Kong
- 申请人: Joung-Yeal Kim , Young-hyun Jun , Bai-sun Kong
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2008-0075618 20080801
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
Provided is a semiconductor device for performing charge pumping. The semiconductor device may include a first pumping unit, a second pumping unit, and a controller. The first pumping unit may be configured to output a boosted voltage via an output node by using a first input signal and the initial voltage, where the boosted voltage is greater than an initial voltage. The second pumping unit may be configured to output the boosted voltage via the output node by using a second input signal and the initial voltage. The controller may be configured to control the first and second pumping units. Each of the first and second pumping units may include an initialization unit, a boosting unit, and a transmission unit. The initialization unit may be configured to control a voltage of a boosting node to be equal to the initial voltage during an initialization operation. The boosting unit may be configured to boost the voltage of the boosting node based on the first and second input signals. Also, the transmission unit may be configured to control output of the boosted voltage.
公开/授权文献
- US07928795B2 Semiconductor device for charge pumping 公开/授权日:2011-04-19
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