Invention Application
US20100028238A1 PLASMA SOURCE AND METHODS FOR DEPOSITING THIN FILM COATINGS USING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
有权
使用等离子体增强化学气相沉积沉积薄膜的等离子体源和方法
- Patent Title: PLASMA SOURCE AND METHODS FOR DEPOSITING THIN FILM COATINGS USING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
- Patent Title (中): 使用等离子体增强化学气相沉积沉积薄膜的等离子体源和方法
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Application No.: US12535447Application Date: 2009-08-04
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Publication No.: US20100028238A1Publication Date: 2010-02-04
- Inventor: Peter MASCHWITZ
- Applicant: Peter MASCHWITZ
- Applicant Address: US GA Alpharetta
- Assignee: AGC Flat Glass North America, Inc.
- Current Assignee: AGC Flat Glass North America, Inc.
- Current Assignee Address: US GA Alpharetta
- Main IPC: C01B33/12
- IPC: C01B33/12 ; C23C16/513 ; H05H1/24
Abstract:
The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.
Public/Granted literature
- US08652586B2 Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition Public/Granted day:2014-02-18
Information query
