发明申请
- 专利标题： METHOD OF MANUFACTURING A DUAL CONTACT TRENCH CAPACITOR.
- 专利标题（中）： 制造双接触电容器的方法。
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申请号： US12181335申请日： 2008-07-29
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公开(公告)号： US20100029055A1公开(公告)日： 2010-02-04
- 发明人: Timothy W. Kemerer , Jenifer E. Lary , James S. Nakos , Steven M. Shank
- 申请人： Timothy W. Kemerer , Jenifer E. Lary , James S. Nakos , Steven M. Shank
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A method of manufacturing a dual contact trench capacitor is provided. The method includes forming a first plate provided within a trench and isolated from a wafer body by a first insulator layer formed in the trench. The method further includes forming a second plate provided within the trench and isolated from the wafer body and the first plate by a second insulator layer formed in the trench.
公开/授权文献
- US07897473B2 Method of manufacturing a dual contact trench capacitor 公开/授权日：2011-03-01
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