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公开(公告)号：US08441103B2
公开(公告)日：2013-05-14
申请号：US13349158
申请日：2012-01-12
IPC分类号： H01L29/00 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L28/91
摘要： Trench capacitors and methods of manufacturing the trench capacitors are provided. The trench capacitors are very dense series capacitor structures with independent electrode contacts. In the method, a series of capacitors are formed by forming a plurality of insulator layers and a plurality of electrodes in a trench structure, where each electrode is formed in an alternating manner with each insulator layer. The method further includes planarizing the electrodes to form contact regions for a plurality of capacitors.
摘要翻译： 提供了沟槽电容器和制造沟槽电容器的方法。 沟槽电容器是具有独立电极触点的非常密集的串联电容器结构。 在该方法中，通过在沟槽结构中形成多个绝缘体层和多个电极而形成一系列电容器，其中每个电极与每个绝缘体层交替地形成。 该方法还包括平面化电极以形成多个电容器的接触区域。
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2.发明申请DUAL CONTACT TRENCH RESISTOR AND CAPACITOR IN SHALLOW TRENCH ISOLATION (STI) AND METHODS OF MANUFACTURE 有权双重接触式电阻和电容器在低温隔离（STI）和制造方法公开(公告)号：US20120299152A1
公开(公告)日：2012-11-29
申请号：US13114543
申请日：2011-05-24
CPC分类号： H01L28/20 , H01L27/016 , H01L27/0682 , H01L28/40 , H01L28/90
摘要： A resistor and capacitor are provided in respective shallow trench isolation structures. The method includes forming a first and second trench in a substrate and forming a first insulator layer within the first and second trench. The method includes forming a first electrode material within the first and second trench, on the first insulator layer, and forming a second insulator layer within the first and second trench and on the first electrode material. The method includes forming a second electrode material within the first and second trench, on the second insulator layer. The second electrode material pinches off the second trench. The method includes removing a portion of the second electrode material and the second insulator layer at a bottom portion of the first trench, and filling in the first trench with additional second electrode material. The additional second electrode material is in electrical contact with the first electrode material.
摘要翻译： 在相应的浅沟槽隔离结构中提供电阻器和电容器。 该方法包括在衬底中形成第一和第二沟槽，并在第一和第二沟槽内形成第一绝缘体层。 该方法包括在第一和第二沟槽内，在第一绝缘体层上形成第一电极材料，以及在第一和第二沟槽内和第一电极材料上形成第二绝缘体层。 该方法包括在第二绝缘体层上在第一和第二沟槽内形成第二电极材料。 第二电极材料夹住第二沟槽。 该方法包括在第一沟槽的底部处去除第二电极材料和第二绝缘体层的一部分，并且用另外的第二电极材料填充第一沟槽。 附加的第二电极材料与第一电极材料电接触。
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3.发明申请DUAL CONTACT TRENCH RESISTOR IN SHALLOW TRENCH ISOLATION (STI) AND METHODS OF MANUFACTURE 有权浅层隔离（STI）和制造方法中的双接触式电镀电阻公开(公告)号：US20120205776A1
公开(公告)日：2012-08-16
申请号：US13025501
申请日：2011-02-11
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L28/20 , H01L21/76229 , H01L27/1116
摘要： The invention relates to a semiconductor structures and methods of manufacture and, more particularly, to a dual contact trench resistor in shallow trench isolation (STI) and methods of manufacture. In a first aspect of the invention, a method comprises forming a trench in a substrate; forming a first insulator layer within the trench; forming a first electrode within the trench, on the first insulator layer, and isolated from the substrate by the first insulator layer; forming a second insulator layer within the trench and on the first electrode; and forming a second electrode within the trench, on the second insulator layer, and isolated from the substrate by the first insulator layer and the second insulator layer.
摘要翻译： 本发明涉及一种半导体结构及其制造方法，更具体地涉及浅沟槽隔离（STI）中的双接触沟槽电阻器及其制造方法。 在本发明的第一方面中，一种方法包括在衬底中形成沟槽; 在所述沟槽内形成第一绝缘体层; 在所述沟槽内形成第一电极，在所述第一绝缘体层上，并通过所述第一绝缘体层与所述衬底隔离; 在所述沟槽内和所述第一电极上形成第二绝缘体层; 以及在所述沟槽内，在所述第二绝缘体层上形成第二电极，并且通过所述第一绝缘体层和所述第二绝缘体层与所述衬底隔离。
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公开(公告)号：US20100029056A1
公开(公告)日：2010-02-04
申请号：US12181338
申请日：2008-07-29
IPC分类号： H01L21/334
CPC分类号： H01L28/90
摘要： A method of manufacturing a dual contact trench capacitor is provided. The method includes a first plate extending from a trench and isolated from a wafer body, and forming a second plate extending from the trench and isolated from the wafer body and the first plate.
摘要翻译： 提供一种制造双接触沟槽电容器的方法。 该方法包括从沟槽延伸并从晶片本体隔离的第一板，以及形成从沟槽延伸并与晶片本体和第一板隔离的第二板。
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公开(公告)号：US07897473B2
公开(公告)日：2011-03-01
申请号：US12181335
申请日：2008-07-29
IPC分类号： H01L21/20
CPC分类号： H01L27/0733 , H01L21/76229 , H01L28/90
摘要： A method of manufacturing a dual contact trench capacitor is provided. The method includes forming a first plate provided within a trench and isolated from a wafer body by a first insulator layer formed in the trench. The method further includes forming a second plate provided within the trench and isolated from the wafer body and the first plate by a second insulator layer formed in the trench.
摘要翻译： 提供一种制造双接触沟槽电容器的方法。 该方法包括形成设置在沟槽内的第一板，并且通过形成在沟槽中的第一绝缘体层与晶片本体隔离。 该方法还包括形成设置在沟槽内的第二板，并且通过在沟槽中形成的第二绝缘体与晶片本体和第一板隔离。
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公开(公告)号：US20100025814A1
公开(公告)日：2010-02-04
申请号：US12181343
申请日：2008-07-29
CPC分类号： H01L28/90 , H01L29/945
摘要： A dual contact trench capacitor and design structure for a dual contact trench capacitor is provided. The structure includes a first plate extending from a trench and isolated from a wafer body, and a second plate extending from the trench and isolated from the wafer body and the first plate.
摘要翻译： 提供双接触沟槽电容器和双接触沟槽电容器的设计结构。 该结构包括从沟槽延伸并与晶片本体隔离的第一板和从沟槽延伸并与晶片体和第一板分离的第二板。
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公开(公告)号：US08384140B2
公开(公告)日：2013-02-26
申请号：US12181341
申请日：2008-07-29
IPC分类号： H01L27/108
CPC分类号： H01L28/90 , H01L29/945
摘要： A dual contact trench capacitor and design structure for a dual contact trench capacitor is provided. The structure includes a first plate extending from a trench and isolated from a wafer body, and a second plate extending from the trench and isolated from the wafer body and the first plate.
摘要翻译： 提供双接触沟槽电容器和双接触沟槽电容器的设计结构。 该结构包括从沟槽延伸并与晶片本体隔离的第一板和从沟槽延伸并与晶片体和第一板分离的第二板。
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公开(公告)号：US20120104551A1
公开(公告)日：2012-05-03
申请号：US13349158
申请日：2012-01-12
IPC分类号： H01L29/92
CPC分类号： H01L28/91
摘要： Trench capacitors and methods of manufacturing the trench capacitors are provided. The trench capacitors are very dense series capacitor structures with independent electrode contacts. In the method, a series of capacitors are formed by forming a plurality of insulator layers and a plurality of electrodes in a trench structure, where each electrode is formed in an alternating manner with each insulator layer. The method further includes planarizing the electrodes to form contact regions for a plurality of capacitors.
摘要翻译： 提供了沟槽电容器和制造沟槽电容器的方法。 沟槽电容器是具有独立电极触点的非常密集的串联电容器结构。 在该方法中，通过在沟槽结构中形成多个绝缘体层和多个电极而形成一系列电容器，其中每个电极与每个绝缘体层交替地形成。 该方法还包括平面化电极以形成多个电容器的接触区域。
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公开(公告)号：US20110084360A1
公开(公告)日：2011-04-14
申请号：US12575989
申请日：2009-10-08
CPC分类号： H01L28/91
摘要： Trench capacitors and methods of manufacturing the trench capacitors are provided. The trench capacitors are very dense series capacitor structures with independent electrode contacts. In the method, a series of capacitors are formed by forming a plurality of insulator layers and a plurality of electrodes in a trench structure, where each electrode is formed in an alternating manner with each insulator layer. The method further includes planarizing the electrodes to form contact regions for a plurality of capacitors.
摘要翻译： 提供了沟槽电容器和制造沟槽电容器的方法。 沟槽电容器是具有独立电极触点的非常密集的串联电容器结构。 在该方法中，通过在沟槽结构中形成多个绝缘体层和多个电极而形成一系列电容器，其中每个电极与每个绝缘体层交替地形成。 该方法还包括平面化电极以形成多个电容器的接触区域。
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公开(公告)号：US07759189B2
公开(公告)日：2010-07-20
申请号：US12181338
申请日：2008-07-29
IPC分类号： H01L21/8242
CPC分类号： H01L28/90
摘要： A method of manufacturing a dual contact trench capacitor is provided. The method includes a first plate extending from a trench and isolated from a wafer body, and forming a second plate extending from the trench and isolated from the wafer body and the first plate.
摘要翻译： 提供一种制造双接触沟槽电容器的方法。 该方法包括从沟槽延伸并从晶片本体隔离的第一板，以及形成从沟槽延伸并与晶片本体和第一板隔离的第二板。
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