发明申请
- 专利标题: CAPACITOR FORMED IN INTERLEVEL DIELECTRIC LAYER
- 专利标题(中): 电容式电介质层形成电容器
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申请号: US12538735申请日: 2009-08-10
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公开(公告)号: US20100032801A1公开(公告)日: 2010-02-11
- 发明人: Jarvis Benjamin Jacobs , Max Walthour Lippitt , Scott Kelly Montgomery , Robert William Murto , Byron Lovell Williams , Duofeng Yue
- 申请人: Jarvis Benjamin Jacobs , Max Walthour Lippitt , Scott Kelly Montgomery , Robert William Murto , Byron Lovell Williams , Duofeng Yue
- 申请人地址: US TX Dallas
- 专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址: US TX Dallas
- 主分类号: H01L29/92
- IPC分类号: H01L29/92 ; H01L21/02
摘要:
An capacitor is formed in an interlevel dielectric (ILD) layer of the integrated circuit (IC) by etching vertical trenches through the ILD and depositing conformal layers of a bottom electrode metal, a capacitor dielectric and a top electrode metal. The capacitor can attain a capacitance density of 20 nanofarads/mm2 in a 1 micron thick ILD, and is suitable for replacing external capacitors in a circuit containing the IC with external circuit elements. The disclosed fabrication methods are compatible with aluminum or copper interconnects.