发明申请
- 专利标题： Group III Nitride Articles and Methods for Making Same
- 专利标题（中）： III类氮化物制品及其制作方法
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申请号： US12085857申请日： 2006-11-30
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公开(公告)号： US20100044718A1公开(公告)日： 2010-02-25
- 发明人: Andrew D. Hanser , Lianghong Liu , Edward A. Preble , Denis Tsvetkov , Nathaniel Mark Williams , Xueping Xu
- 申请人： Andrew D. Hanser , Lianghong Liu , Edward A. Preble , Denis Tsvetkov , Nathaniel Mark Williams , Xueping Xu
- 国际申请： PCT/US06/45965 WO 20061130
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/04
摘要：
Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.
公开/授权文献
- US08435879B2 Method for making group III nitride articles 公开/授权日：2013-05-07
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