-
公开(公告)号：US08435879B2
公开(公告)日：2013-05-07
申请号：US12085857
申请日：2006-11-30
申请人： Andrew D. Hanser , Lianghong Liu , Edward A. Preble , Denis Tsvetkov , Nathaniel Mark Williams , Xueping Xu
发明人： Andrew D. Hanser , Lianghong Liu , Edward A. Preble , Denis Tsvetkov , Nathaniel Mark Williams , Xueping Xu
IPC分类号： H01L21/28
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.
摘要翻译： 用于制造光电子器件（如发光二极管（LED），激光二极管（LD））和光电检测器的III族（Al，Ga，In）N单晶，制品和膜以及电子器件（如高电子迁移率晶体管 由III-V族氮化物组成的HEMT）以及制造这种晶体，制品和薄膜的方法。
-
2.发明授权Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same 有权无夹杂均匀半绝缘III族氮化物衬底及其制造方法公开(公告)号：US08202793B2
公开(公告)日：2012-06-19
申请号：US12855087
申请日：2010-08-12
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.
摘要翻译： 在制造无夹杂物的均匀半绝缘GaN晶体的方法中，在衬底上沉积外延氮化物层。 3D成核GaN层通过HVPE在基本上3D生长模式下在外延氮化物层上生长，其中成核层的表面基本上被凹坑覆盖，并且凹坑的纵横比基本相同。 在将生长模式从基本上3D生长模式改变为基本上2D生长模式的条件下，通过HVPE在成核层上生长GaN过渡层。 在生长过渡层之后，过渡层的表面基本上是无凹坑的。 通过HVPE在过渡层上生长体GaN层。 在生长本体层之后，本体层的表面是光滑的并且基本上无凹坑。 在至少一个上述GaN生长步骤期间，GaN掺杂有过渡金属。
-
3.发明授权Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same 有权无夹杂均匀半绝缘III族氮化物衬底及其制造方法公开(公告)号：US07777217B2
公开(公告)日：2010-08-17
申请号：US11606633
申请日：2006-11-30
IPC分类号： H01L31/00
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.
摘要翻译： 在制造无夹杂物的均匀半绝缘GaN晶体的方法中，在衬底上沉积外延氮化物层。 3D成核GaN层通过HVPE在基本上3D生长模式下在外延氮化物层上生长，其中成核层的表面基本上被凹坑覆盖，并且凹坑的纵横比基本相同。 在将生长模式从基本上3D生长模式改变为基本上2D生长模式的条件下，通过HVPE在成核层上生长GaN过渡层。 在生长过渡层之后，过渡层的表面基本上是无凹坑的。 通过HVPE在过渡层上生长体GaN层。 在生长本体层之后，本体层的表面是光滑的并且基本上无凹坑。 在至少一个上述GaN生长步骤期间，GaN掺杂有过渡金属。
-
公开(公告)号：US20100044718A1
公开(公告)日：2010-02-25
申请号：US12085857
申请日：2006-11-30
申请人： Andrew D. Hanser , Lianghong Liu , Edward A. Preble , Denis Tsvetkov , Nathaniel Mark Williams , Xueping Xu
发明人： Andrew D. Hanser , Lianghong Liu , Edward A. Preble , Denis Tsvetkov , Nathaniel Mark Williams , Xueping Xu
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.
摘要翻译： 用于制造光电子器件（如发光二极管（LED），激光二极管（LD））和光电检测器的III族（Al，Ga，In）N单晶，制品和膜以及电子器件（如高电子迁移率晶体管 由III-V族氮化物组成的HEMT）以及制造这种晶体，制品和薄膜的方法。
-
公开(公告)号：US06579359B1
公开(公告)日：2003-06-17
申请号：US09585331
申请日：2000-06-02
申请人： Marina Mynbaeva , Denis Tsvetkov , Vladimir Dmitriev , Alexander Lebedev , Nataliya Savkina , Alexander Syrkin , Stephen Saddow , Karim Mynbaev
发明人： Marina Mynbaeva , Denis Tsvetkov , Vladimir Dmitriev , Alexander Lebedev , Nataliya Savkina , Alexander Syrkin , Stephen Saddow , Karim Mynbaev
IPC分类号： C30B2518
CPC分类号： C30B25/02 , C30B25/18 , C30B29/36 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/02378 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02658
摘要： A method is disclosed for fabricating monocrystal material with the bandgap width exceeding 1.8 eV. The method comprises the steps of processing a monocrystal semiconductor wafer to develop a porous layer through electrolytic treatment of the wafer at direct current under UV-illumination, and epitaxially growing a monocrystal layer on said porous layer. Growth on porous layer produces semiconductor material with reduced stress and better characteristics than with the same material grown on non-porous layers and substrates. Also, semiconductor device structure comprising at least one layer of porous group III material is included.
摘要翻译： 公开了一种制造带隙宽度超过1.8eV的单晶材料的方法。 该方法包括以下步骤：通过在UV照射下以直流电流处理晶片，并且在所述多孔层上外延生长单晶层，来处理单晶半导体晶片以开发多孔层。 多孔层上的生长产生的半导体材料具有比在非多孔层和基底上生长的相同材料更低的应力和更好的特性。 此外，包括至少一层多孔III族材料的半导体器件结构。
-
6.发明申请INCLUSION-FREE UNIFORM SEMI-INSULATING GROUP III NITRIDE SUBSTRATES AND METHODS FOR MAKING SAME 有权无包层均匀半绝缘III族氮化物衬底及其制造方法公开(公告)号：US20110042682A1
公开(公告)日：2011-02-24
申请号：US12855087
申请日：2010-08-12
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.
摘要翻译： 在制造无夹杂物的均匀半绝缘GaN晶体的方法中，在衬底上沉积外延氮化物层。 3D成核GaN层通过HVPE在基本上3D生长模式下在外延氮化物层上生长，其中成核层的表面基本上被凹坑覆盖，并且凹坑的纵横比基本相同。 在将生长模式从基本上3D生长模式改变为基本上2D生长模式的条件下，通过HVPE在成核层上生长GaN过渡层。 在生长过渡层之后，过渡层的表面基本上是无凹坑的。 通过HVPE在过渡层上生长体GaN层。 在生长本体层之后，本体层的表面是光滑的并且基本上无凹坑。 在至少一个上述GaN生长步骤期间，GaN掺杂有过渡金属。
-
7.发明申请Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same 有权无夹杂均匀半绝缘III族氮化物衬底及其制造方法公开(公告)号：US20070141823A1
公开(公告)日：2007-06-21
申请号：US11606633
申请日：2006-11-30
申请人： Edward Preble , Denis Tsvetkov , Andrew Hanser , N. Williams , Xueping Xu
发明人： Edward Preble , Denis Tsvetkov , Andrew Hanser , N. Williams , Xueping Xu
IPC分类号： H01L21/28
CPC分类号： H01L21/02694 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0257 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/0688 , H01L29/2003 , H01L33/007 , H01L33/30 , H01L33/32
摘要： In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.
摘要翻译： 在制造无夹杂物的均匀半绝缘GaN晶体的方法中，在衬底上沉积外延氮化物层。 3D成核GaN层通过HVPE在基本上3D生长模式下在外延氮化物层上生长，其中成核层的表面基本上被凹坑覆盖，并且凹坑的纵横比基本相同。 在将生长模式从基本上3D生长模式改变为基本上2D生长模式的条件下，通过HVPE在成核层上生长GaN过渡层。 在生长过渡层之后，过渡层的表面基本上是无凹坑的。 通过HVPE在过渡层上生长体GaN层。 在生长本体层之后，本体层的表面是光滑的并且基本上无凹坑。 在至少一个上述GaN生长步骤期间，GaN掺杂有过渡金属。
-
8.发明授权Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device 有权使用HVPE生长的III-V复合层和所得器件制造P-N异质结器件的方法公开(公告)号：US06890809B2
公开(公告)日：2005-05-10
申请号：US10217309
申请日：2002-08-09
IPC分类号： C30B25/02 , H01L21/205 , H01L31/0304 , H01L31/105 , H01L33/00 , H01L21/8238
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/0304 , H01L31/105 , H01L33/007 , Y02E10/544 , Y02P70/521
摘要： A method for fabricating a p-n heterojunction device is provided, the device being preferably comprised of an n-type GaN layer co-doped with silicon and zinc and a p-type AlGaN layer. The device may also include a p-type GaN capping layer. The device can be grown on any of a variety of different base substrates, the base substrate comprised of either a single substrate or a single substrate and an intermediary layer. The device can be grown directly onto the surface of the substrate without the inclusion of a low temperature buffer layer.
摘要翻译： 提供了一种制造p-n异质结器件的方法，该器件优选由与硅和锌共掺杂的n型GaN层和p型AlGaN层组成。 该器件还可以包括p型GaN覆盖层。 该器件可以生长在各种不同的基底衬底上，基底衬底由单个衬底或单个衬底和中间层组成。 该器件可以直接生长在衬底的表面上，而不包含低温缓冲层。
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.019 秒)
