发明申请
- 专利标题： Non-volatile memory device and method of manufacturing same
- 专利标题（中）： 非易失性存储器件及其制造方法
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申请号： US12461416申请日： 2009-08-11
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公开(公告)号： US20100044778A1公开(公告)日： 2010-02-25
- 发明人: Kwang-soo Seol , Yoon-dong Park
- 申请人： Kwang-soo Seol , Yoon-dong Park
- 优先权： KR10-2008-0081857 20080821
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/20 ; H01L21/28
摘要：
A non-volatile memory device and a method of manufacturing the non-volatile memory device are provided. At least one first semiconductor layer and at least one second semiconductor layer are disposed. At least one control gate electrode is disposed between the at least one first semiconductor layer and the at least one second semiconductor layer. At least one first layer selection line is capacitively coupled to the at least one first semiconductor layer. At least one second layer selection line is capacitively coupled to the at least one second semiconductor layer.
公开/授权文献
- US08053302B2 Non-volatile memory device and method of manufacturing same 公开/授权日：2011-11-08
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