发明申请
US20100047988A1 METHODS OF FORMING A LAYER, METHODS OF FORMING A GATE STRUCTURE AND METHODS OF FORMING A CAPACITOR
审中-公开
形成层的方法,形成门结构的方法和形成电容器的方法
- 专利标题: METHODS OF FORMING A LAYER, METHODS OF FORMING A GATE STRUCTURE AND METHODS OF FORMING A CAPACITOR
- 专利标题(中): 形成层的方法,形成门结构的方法和形成电容器的方法
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申请号: US12542813申请日: 2009-08-18
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公开(公告)号: US20100047988A1公开(公告)日: 2010-02-25
- 发明人: Youn-Joung Cho , Youn-Soo Kim , Kyu-Ho Cho , Jung-Ho Lee , Jae-Hyoung Choi , Seung-Min Ryu
- 申请人: Youn-Joung Cho , Youn-Soo Kim , Kyu-Ho Cho , Jung-Ho Lee , Jae-Hyoung Choi , Seung-Min Ryu
- 优先权: KR10-2008-0080833 20080819
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; C07F7/00 ; H01L21/28
摘要:
In a method of forming a layer, a precursor including a metal and a ligand coordinating to the metal is stabilized by contacting the precursor with an electron donating compound to provide a stabilized precursor into a substrate. A reactant is introduced into the substrate to bind to the metal in the stabilized precursor. The precursor stabilized by the electron donating compound has an improved thermal stability and thus the precursor is not dissociated at a high temperature atmosphere, and the layer having a uniform thickness is formed on the substrate.
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