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    Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor
    3.
    发明授权
    Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor 有权
    前体组成，形成层的方法，形成栅极结构的方法和形成电容器的方法

    公开(公告)号：US08563085B2

    公开(公告)日：2013-10-22

    申请号：US13035659

    申请日：2011-02-25

    申请人： Youn-Joung Cho ,  Youn-Soo Kim ,  Kyu-Ho Cho ,  Jung-Ho Lee ,  Jae-Hyoung Choi ,  Seung-Min Ryu

    发明人： Youn-Joung Cho ,  Youn-Soo Kim ,  Kyu-Ho Cho ,  Jung-Ho Lee ,  Jae-Hyoung Choi ,  Seung-Min Ryu

    IPC分类号： C23C16/00

    CPC分类号： C23C16/18 ,  C23C16/405 ,  C23C16/45553 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91

    摘要： In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.

    摘要翻译： 在形成层的方法中，通过使前体组合物与给电子化合物接触以将稳定的前体组合物接触到基底上来稳定包含金属和螯合金属的配体的前体组合物。 将反应物引入到底物上以与稳定化的前体组合物中的金属结合。 在将供电子化合物引入到基板上之后，将前体组合物引入到基板上，将稳定化的前体组合物提供到基板上。 引入前体组合物之前和之后，将电子给体化合物连续引入到基质上。

    Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor
    4.
    发明申请
    Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor 有权
    前体成分，形成层的方法，形成栅极结构的方法和形成电容器的方法

    公开(公告)号：US20110183527A1

    公开(公告)日：2011-07-28

    申请号：US13035659

    申请日：2011-02-25

    申请人： Youn-Joung Cho ,  Youn-Soo Kin ,  Kyu-Ho Cho ,  Jung-Ho Lee ,  Jae-Hyoung Choi ,  Seung-Min Ryu

    发明人： Youn-Joung Cho ,  Youn-Soo Kin ,  Kyu-Ho Cho ,  Jung-Ho Lee ,  Jae-Hyoung Choi ,  Seung-Min Ryu

    IPC分类号： H01L21/314

    CPC分类号： C23C16/18 ,  C23C16/405 ,  C23C16/45553 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91

    摘要： In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.

    摘要翻译： 在形成层的方法中，通过使前体组合物与给电子化合物接触来稳定前体组合物，该组合物包含金属和与金属螯合的配体，以将稳定化的前体组合物提供到基底上。 将反应物引入到底物上以与稳定化的前体组合物中的金属结合。 在将供电子化合物引入到基板上之后，将前体组合物引入到基板上，将稳定化的前体组合物提供到基板上。 引入前体组合物之前和之后，将电子给体化合物连续引入到基质上。

    CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR
    9.
    发明申请
    CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR 审中-公开
    包括电容器的电容器和半导体器件

    公开(公告)号：US20120119327A1

    公开(公告)日：2012-05-17

    申请号：US13238032

    申请日：2011-09-21

    申请人： Oh-Seong Kwon ,  Kyu-Ho Cho ,  Wan-Don Kim ,  Beom-Seok Kim ,  Yong-Suk Tak

    发明人： Oh-Seong Kwon ,  Kyu-Ho Cho ,  Wan-Don Kim ,  Beom-Seok Kim ,  Yong-Suk Tak

    IPC分类号： H01L29/92

    CPC分类号： H01L28/40 ,  H01L27/10852 ,  H01L27/10876 ,  H01L28/65

    摘要： A capacitor in a semiconductor memory device comprises a lower electrode on a substrate that is formed of a conductive metal oxide having a rutile crystalline structure, a titanium oxide dielectric layer on the lower electrode that has a rutile crystalline structure and includes impurities for reducing a leakage current, and an upper electrode on the titanium oxide dielectric layer. A method of forming a capacitor in a semiconductor device comprise steps of forming a lower electrode on a substrate that includes a conductive metal oxide having a rutile crystalline structure, forming a titanium oxide dielectric layer on the lower electrode that has a rutile crystalline structure and impurities for reducing a leakage current, and forming an upper electrode on the titanium oxide dielectric layer.

    摘要翻译： 半导体存储器件中的电容器包括由具有金红石晶体结构的导电金属氧化物形成的衬底上的下电极，下电极上的具有金红石晶体结构的氧化钛电介质层，并且包括用于减少漏电的杂质 电流和氧化钛电介质层上的上电极。 在半导体器件中形成电容器的方法包括以下步骤：在包括具有金红石晶体结构的导电金属氧化物的衬底上形成下电极，在具有金红石晶体结构的下电极上形成氧化钛电介质层和杂质 用于减少漏电流，以及在氧化钛电介质层上形成上电极。