Invention Application
- Patent Title: LOCALIZED ANNEALING DURING SEMICONDUCTOR DEVICE FABRICATION
- Patent Title (中): 半导体器件制造期间的局部化退火
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Application No.: US12158678Application Date: 2006-12-19
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Publication No.: US20100047996A1Publication Date: 2010-02-25
- Inventor: Shu Yuan , Jing Lin
- Applicant: Shu Yuan , Jing Lin
- Applicant Address: SG Singapore
- Assignee: Tinggi Technologies Private Limited
- Current Assignee: Tinggi Technologies Private Limited
- Current Assignee Address: SG Singapore
- Priority: SG200508210-2 20051220
- International Application: PCT/SG2006/000395 WO 20061219
- Main IPC: H01L21/26
- IPC: H01L21/26 ; H01L21/30
Abstract:
A process for the fabrication of semiconductor devices on a substrate, the semiconductor devices including at least one metal layer. The process includes, removing the substrate and applying a second substrate; and annealing the at least one metal layer by application of a beam of electromagnetic radiation on the at least one metal layer.
Public/Granted literature
- US08329556B2 Localized annealing during semiconductor device fabrication Public/Granted day:2012-12-11
Information query
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