发明申请
- 专利标题： Thin film transistor and method of manufacturing the same
- 专利标题（中）： 薄膜晶体管及其制造方法
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申请号： US12453293申请日： 2009-05-06
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公开(公告)号： US20100059756A1公开(公告)日： 2010-03-11
- 发明人: Kyung-bae Park , Myung-kwan Ryu , Byung-wook Yoo , Sang-yoon Lee , Tae-sang Kim , Jang-yeon Kwon , Kyung-seok Son , Ji-sim Jung
- 申请人： Kyung-bae Park , Myung-kwan Ryu , Byung-wook Yoo , Sang-yoon Lee , Tae-sang Kim , Jang-yeon Kwon , Kyung-seok Son , Ji-sim Jung
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2008-0090007 20080911
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336
摘要：
Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT, is reduced due to the intermediate layer. Accordingly, the TFT may be stably driven.
公开/授权文献
- US08120029B2 Thin film transistor and method of manufacturing the same 公开/授权日：2012-02-21
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