发明申请
US20100062591A1 N2 BASED PLASMA TREATMENT AND ASH FOR HK METAL GATE PROTECTION
有权
N2基础等离子体处理和ASH用于HK金属门保护
- 专利标题： N2 BASED PLASMA TREATMENT AND ASH FOR HK METAL GATE PROTECTION
- 专利标题（中）： N2基础等离子体处理和ASH用于HK金属门保护
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申请号： US12400395申请日： 2009-03-09
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公开(公告)号： US20100062591A1公开(公告)日： 2010-03-11
- 发明人: Yu Chao Lin , Ryan Chia-Jen Chen , Yih-Ann Lin , Jr Jung Lin
- 申请人： Yu Chao Lin , Ryan Chia-Jen Chen , Yih-Ann Lin , Jr Jung Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
The present disclosure provides a method for making a semiconductor device. The method includes forming a first material layer on substrate; forming a patterned photoresist layer on the first material layer; applying an etching process to the first material layer using the patterned photoresist layer as a mask; and applying a nitrogen-containing plasma to the substrate to remove the patterned photoresist layer.
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