发明申请
US20100066411A1 LOGIC CIRCUIT USING METAL-INSULATOR TRANSITION (MIT) DEVICE
失效
使用金属绝缘子转换(MIT)器件的逻辑电路
- 专利标题: LOGIC CIRCUIT USING METAL-INSULATOR TRANSITION (MIT) DEVICE
- 专利标题(中): 使用金属绝缘子转换(MIT)器件的逻辑电路
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申请号: US12447922申请日: 2007-08-07
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公开(公告)号: US20100066411A1公开(公告)日: 2010-03-18
- 发明人: JungWook Lim , Sun-Jin Yun , Hyun-Tak Kim
- 申请人: JungWook Lim , Sun-Jin Yun , Hyun-Tak Kim
- 申请人地址: KR Daejeon-city
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KR Daejeon-city
- 优先权: KR10-2006-0108034 20061102; KR10-2007-0011121 20070202
- 国际申请: PCT/KR07/03790 WO 20070807
- 主分类号: H03K19/08
- IPC分类号: H03K19/08 ; H03K19/20
摘要:
Provided is a logic circuit comprising a metal-insulator transition (MIT) device, including: an MIT device unit including an MIT thin film, an electrode thin film contacting the MIT thin film, and at least one MIT device undergoing a discontinuous MIT at a transition voltage VT; a power source unit including at least one power source applying power to the MIT device; and at least one resistor connected to the MIT device, wherein a logic operation is performed on a signal through the power source to output the result of the logic operation as an output signal.
公开/授权文献
- US07791376B2 Logic circuit using metal-insulator transition (MIT) device 公开/授权日:2010-09-07
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