发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD
- 专利标题(中): 半导体器件和半导体制造方法
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申请号: US12450424申请日: 2008-03-25
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公开(公告)号: US20100072485A1公开(公告)日: 2010-03-25
- 发明人: Jun Suda , Tsunenobu Kimoto
- 申请人: Jun Suda , Tsunenobu Kimoto
- 专利权人: Kyoto University
- 当前专利权人: Kyoto University
- 优先权: JP2007-080243 20070326
- 国际申请: PCT/JP2008/055488 WO 20080325
- 主分类号: H01L29/24
- IPC分类号: H01L29/24 ; G02B6/10
摘要:
One atomic layer of Si atoms 3 is grown on an Si-terminated SiC surface 1a having an Si polar face, and one atomic layer of C atoms 5 is further grown thereon. Then, Si and C are supplied to form an SiC layer. The surface of the SiC layer thus grown is a C polar face opposite to the Si polar face. That is, according to the above-described step, it is possible to grow an SiC polarity-reversed layer 1x having a C polarity on an SiC layer 1 having an Si polarity, with one atomic layer of an Si intermediate layer b interposed therebetween. Consequently, it is possible to provide a technique to reverse the polarity of SiC on the surface.