Method of Fabricating a Gate Dielectric for High-K Metal Gate Devices

Invention Application

US20100075507A1 Method of Fabricating a Gate Dielectric for High-K Metal Gate Devices 有权

Title translation: 制造高K金属栅极器件栅极电介质的方法

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Patent Title: Method of Fabricating a Gate Dielectric for High-K Metal Gate Devices
Patent Title (中): 制造高K金属栅极器件栅极电介质的方法
Application No.: US12550767

Application Date: 2009-08-31
Publication No.: US20100075507A1

Publication Date: 2010-03-25
Inventor: Che-Hao Chang , Cheng-Hao Hou , Chen-Hua Yu , Tai-Bor Wu
Applicant: Che-Hao Chang , Cheng-Hao Hou , Chen-Hua Yu , Tai-Bor Wu
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Main IPC: H01L21/314
IPC: H01L21/314

Method of Fabricating a Gate Dielectric for High-K Metal Gate Devices

Abstract:

The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a substrate, forming an interfacial layer on the substrate by treating the substrate with radicals, and forming a high-k dielectric layer on the interfacial layer. The radicals are selected from the group consisting of hydrous radicals, nitrogen/hydrogen radicals, and sulfur/hydrogen radicals.

Abstract(Chinese):

本公开提供了制造半导体器件的方法。该方法包括提供基底，通过用自由基处理基底并在界面层上形成高k电介质层，在基底上形成界面层。基团选自含水基团，氮/氢基团和硫/氢基团。

Public/Granted literature

US09711373B2 Method of fabricating a gate dielectric for high-k metal gate devices Public/Granted day:2017-07-18

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314	......无机层（H01L21/3105，H01L21/32优先）