公开(公告)号：US09711373B2

公开(公告)日：2017-07-18

申请号：US12550767

申请日：2009-08-31

Applicant: Che-Hao Chang ,  Cheng-Hao Hou ,  Chen-Hua Yu ,  Tai-Bor Wu

Inventor： Che-Hao Chang ,  Cheng-Hao Hou ,  Chen-Hua Yu ,  Tai-Bor Wu

IPC: H01L21/469 ,  H01L21/316 ,  C23C16/02 ,  C23C16/30 ,  C23C16/40 ,  C23C16/455 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L29/51

CPC classification number: H01L21/306 ,  C23C16/0272 ,  C23C16/308 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/30604 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3185 ,  H01L29/513 ,  H01L29/517

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a substrate, forming an interfacial layer on the substrate by treating the substrate with radicals, and forming a high-k dielectric layer on the interfacial layer. The radicals are selected from the group consisting of hydrous radicals, nitrogen/hydrogen radicals, and sulfur/hydrogen radicals.

公开(公告)号：US20070215955A1

公开(公告)日：2007-09-20

申请号：US11543039

申请日：2006-10-05

Applicant: Te-Ho Wu ,  Lin-Hsiu Ye ,  Che-Hao Chang ,  Tzu-Jung Chen

Inventor： Te-Ho Wu ,  Lin-Hsiu Ye ,  Che-Hao Chang ,  Tzu-Jung Chen

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC classification number: H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/11502

Abstract: A magnetic tunneling junction structure for magnetic random access memory is disclosed. A composite structure includes at least a pinning layer, a barrier layer, a ferromagnetic layer and a free layer, and the material of the pinning layer and the free layer are perpendicularly anisotropic ferrimagnetic. As the structures include of several barrier layers, free layers and ferrimagnetic layers, that lower coercivity and high squareness for the hysteresis curves can be obtained, and reduction of the coercivity of the free layer can be achieved.

Abstract translation: 公开了一种磁性随机存取存储器的磁隧道结结构。 复合结构至少包括钉扎层，阻挡层，铁磁层和自由层，并且钉扎层和自由层的材料是垂直的各向异性亚铁磁性的。 由于结构包括几个阻挡层，自由层和亚铁磁性层，可以获得磁滞曲线的矫顽力和高矩形度，并且可以实现自由层的矫顽力的降低。

公开(公告)号：US20090082574A1

公开(公告)日：2009-03-26

申请号：US12283468

申请日：2008-09-12

Applicant: Kuang-Lieh Lu ,  Malaichamy Sathiyendiran ,  Chung-Chou Lee ,  Che-Hao Chang ,  Tien-Wen Tseng ,  Shie-Ming Peng ,  Gene-Hsiang Lee

Inventor： Kuang-Lieh Lu ,  Malaichamy Sathiyendiran ,  Chung-Chou Lee ,  Che-Hao Chang ,  Tien-Wen Tseng ,  Shie-Ming Peng ,  Gene-Hsiang Lee

IPC: C07F13/00

CPC classification number: C07F13/005

Abstract: The present invention provides for novel metallacycles and processes for making the same.

Abstract translation: 本发明提供了新的金属元素及其制备方法。

公开(公告)号：US06036033A

公开(公告)日：2000-03-14

申请号：US244661

申请日：1999-02-04

Applicant: Che Hao Chang

Inventor： Che Hao Chang

IPC: A47B57/10 ,  A47F5/14 ,  A47B9/00 ,  A47B43/00

CPC classification number: A47B57/10

Abstract: A construction device includes a rack secured to one or more rods with one or more couplers. Each coupler includes a bore for receiving the rod, a base portion, a wall extended upward from the base portion and a panel extended downward from the base portion. The bottom portions of the panels are inclined relative to the wall for engaging with the rods and for securing the couplers to the rods. The couplers may further include one or more protrusions for engaging with the grooves formed in the rods and for further securing the coupler to the rod.

Abstract translation: 一种施工装置包括固定到一个或多个具有一个或多个耦合器的杆的架子。 每个联接器包括用于接收杆的孔，基部，从基部向上延伸的壁和从基部向下延伸的板。 板的底部相对于壁倾斜，用于与杆接合并将联接器固定到杆上。 耦合器还可以包括一个或多个突起，用于与形成在杆中的槽接合，并且用于将联接器进一步固定到杆上。

公开(公告)号：US20100075507A1

公开(公告)日：2010-03-25

申请号：US12550767

申请日：2009-08-31

Applicant: Che-Hao Chang ,  Cheng-Hao Hou ,  Chen-Hua Yu ,  Tai-Bor Wu

Inventor： Che-Hao Chang ,  Cheng-Hao Hou ,  Chen-Hua Yu ,  Tai-Bor Wu

IPC: H01L21/314

CPC classification number: H01L21/306 ,  C23C16/0272 ,  C23C16/308 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/30604 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3185 ,  H01L29/513 ,  H01L29/517

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a substrate, forming an interfacial layer on the substrate by treating the substrate with radicals, and forming a high-k dielectric layer on the interfacial layer. The radicals are selected from the group consisting of hydrous radicals, nitrogen/hydrogen radicals, and sulfur/hydrogen radicals.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括提供基底，通过用自由基处理基底并在界面层上形成高k电介质层，在基底上形成界面层。 基团选自含水基团，氮/氢基团和硫/氢基团。