发明申请
- 专利标题： MOS TRANSISTOR HAVING AN INCREASED GATE-DRAIN CAPACITANCE
- 专利标题（中）： 具有增加的栅极电容的MOS晶体管
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申请号： US12241947申请日： 2008-09-30
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公开(公告)号： US20100078708A1公开(公告)日： 2010-04-01
- 发明人: Armin Willmeroth , Michael Treu
- 申请人： Armin Willmeroth , Michael Treu
- 申请人地址： AT Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： AT Villach
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/334
摘要：
A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source zone separated from the drift zone by the body zone, and a gate electrode, which is arranged adjacent to the body zone and which s dieletrically insulated from the body zone by a gate dielectric. At least one compensation zone of the first conduction type is arranged in the drift zone. At least one feedback electrode is arranged at a distance from the body zone, which is dielectrically insulated from the drift zone by a feedback dielectric and which is electrically conductively connected to the gate electrode.
公开/授权文献
- US07910983B2 MOS transistor having an increased gate-drain capacitance 公开/授权日：2011-03-22
信息查询
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