Invention Application
- Patent Title: SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件制造方法和半导体器件
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Application No.: US12630337Application Date: 2009-12-03
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Publication No.: US20100078762A1Publication Date: 2010-04-01
- Inventor: Wensheng Wang
- Applicant: Wensheng Wang
- Applicant Address: JP Tokyo
- Assignee: FUJITSU MICROELECTRONICS LIMITED
- Current Assignee: FUJITSU MICROELECTRONICS LIMITED
- Current Assignee Address: JP Tokyo
- Main IPC: H01L29/92
- IPC: H01L29/92 ; H01L21/02 ; H01L21/28
Abstract:
In a semiconductor device manufacturing method, an amorphous or microcrystalline metal oxide film is formed over a first metal film which is preferentially oriented along a predetermined crystal plane. After that, a ferroelectric film is formed by a MOCVD method. When the ferroelectric film is formed, the metal oxide film formed over the first metal film is reduced to a second metal film and the ferroelectric film is formed over the second metal film. When the ferroelectric film is formed, the amorphous or microcrystalline metal oxide film is apt to be reduced uniformly. As a result, the second metal film the orientation of which is good is obtained and the ferroelectric film the orientation of which is good is formed over the second metal film. After the ferroelectric film is formed, an upper electrode is formed over the ferroelectric film.
Public/Granted literature
- US08102022B2 Semiconductor device manufacturing method and semiconductor device Public/Granted day:2012-01-24
Information query
IPC分类:
