Invention Application
- Patent Title: CMOS IMAGER PHOTODIODE WITH ENHANCED CAPACITANCE
- Patent Title (中): 具有增强电容的CMOS IMAGER光电二极管
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Application No.: US12634898Application Date: 2009-12-10
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Publication No.: US20100084690A1Publication Date: 2010-04-08
- Inventor: James W. Adkisson , John J. Ellis-Monaghan , Mark D. Jaffe , Dale J. Pearson , Dennis L. Rogers
- Applicant: James W. Adkisson , John J. Ellis-Monaghan , Mark D. Jaffe , Dale J. Pearson , Dennis L. Rogers
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L31/18

Abstract:
A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface. In a further embodiment, an additional photosensitive element is provided that includes a laterally disposed charge collection region that contacts the non-laterally disposed charge collection region of the photosensitive element and underlies the doped layer formed at the substrate surface.
Public/Granted literature
- US08106432B2 CMOS imager photodiode with enhanced capacitance Public/Granted day:2012-01-31
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