Invention Application
US20100090338A1 MICROELECTRONIC DEVICES INCLUDING MULTIPLE THROUGH-SILICON VIA STRUCTURES ON A CONDUCTIVE PAD AND METHODS OF FABRICATING THE SAME 有权
微电子器件,其包括通过导体衬垫的结构的多个硅,以及制造它们的方法

MICROELECTRONIC DEVICES INCLUDING MULTIPLE THROUGH-SILICON VIA STRUCTURES ON A CONDUCTIVE PAD AND METHODS OF FABRICATING THE SAME
Abstract:
A microelectronic structure includes a conductive pad on a substrate. The conductive pad includes first and second openings extending therethrough. A first conductive via on the conductive pad extends through the first opening in the conductive pad into the substrate. A second conductive via on the conductive pad adjacent the first conductive via extends through the second opening in the conductive pad into the substrate. At least one of the conductive vias may be electrically isolated from the conductive pad. Related devices and fabrication methods are also discussed.
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