发明申请
US20100093187A1 Method for Depositing Conformal Amorphous Carbon Film by Plasma-Enhanced Chemical Vapor Deposition (PECVD)
有权
通过等离子体增强化学气相沉积（PECVD）沉积保形无定形碳膜的方法
- 专利标题： Method for Depositing Conformal Amorphous Carbon Film by Plasma-Enhanced Chemical Vapor Deposition (PECVD)
- 专利标题（中）： 通过等离子体增强化学气相沉积（PECVD）沉积保形无定形碳膜的方法
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申请号： US12577455申请日： 2009-10-12
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公开(公告)号： US20100093187A1公开(公告)日： 2010-04-15
- 发明人: Kwangduk Douglas Lee , Takashi Morii , Yoichi Suzuki , Sudha Rathi , Martin Jay Seamons , Deenesh Padhi , Bok Hoen Kim , Cynthia Pagdanganan
- 申请人： Kwangduk Douglas Lee , Takashi Morii , Yoichi Suzuki , Sudha Rathi , Martin Jay Seamons , Deenesh Padhi , Bok Hoen Kim , Cynthia Pagdanganan
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/312
- IPC分类号： H01L21/312
摘要：
Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.
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