Invention Application
US20100093187A1 Method for Depositing Conformal Amorphous Carbon Film by Plasma-Enhanced Chemical Vapor Deposition (PECVD)
有权
通过等离子体增强化学气相沉积（PECVD）沉积保形无定形碳膜的方法
- Patent Title: Method for Depositing Conformal Amorphous Carbon Film by Plasma-Enhanced Chemical Vapor Deposition (PECVD)
- Patent Title (中): 通过等离子体增强化学气相沉积（PECVD）沉积保形无定形碳膜的方法
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Application No.: US12577455Application Date: 2009-10-12
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Publication No.: US20100093187A1Publication Date: 2010-04-15
- Inventor: Kwangduk Douglas Lee , Takashi Morii , Yoichi Suzuki , Sudha Rathi , Martin Jay Seamons , Deenesh Padhi , Bok Hoen Kim , Cynthia Pagdanganan
- Applicant: Kwangduk Douglas Lee , Takashi Morii , Yoichi Suzuki , Sudha Rathi , Martin Jay Seamons , Deenesh Padhi , Bok Hoen Kim , Cynthia Pagdanganan
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/312
- IPC: H01L21/312
Abstract:
Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.
Public/Granted literature
- US08105465B2 Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD) Public/Granted day:2012-01-31
Information query
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