发明申请
- 专利标题： NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 非挥发性半导体存储器件及其制造方法
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申请号： US12556242申请日： 2009-09-09
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公开(公告)号： US20100096682A1公开(公告)日： 2010-04-22
- 发明人: Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Hiroyasu Tanaka , Masaru Kidoh , Yosuke Komori , Megumi Ishiduki , Akihiro Nitayama , Hideaki Aochi , Hitoshi Ito , Yasuyuki Matsuoka
- 申请人： Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Hiroyasu Tanaka , Masaru Kidoh , Yosuke Komori , Megumi Ishiduki , Akihiro Nitayama , Hideaki Aochi , Hitoshi Ito , Yasuyuki Matsuoka
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-269804 20081020
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/768
摘要：
A non-volatile semiconductor storage device has a memory string including a plurality of electrically rewritable memory cells connected in series. The non-volatile semiconductor storage device also has a protruding layer formed to protrude upward with respect to a substrate. The memory string includes: a plurality of first conductive layers laminated on the substrate; a first semiconductor layer formed to penetrate the plurality of first conductive layers; and an electric charge storage layer formed between the first conductive layers and the first semiconductor layer, and configured to be able to store electric charges. Each of the plurality of first conductive layers includes: a bottom portion extending in parallel to the substrate; and a side portion extending upward with respect to the substrate along the protruding layer at the bottom portion. The protruding layer has a width in a first direction parallel to the substrate that is less than or equal to its length in a lamination direction.
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