- 专利标题: 4 F2 MEMORY CELL ARRAY
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申请号: US12252826申请日: 2008-10-16
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公开(公告)号: US20100097835A1公开(公告)日: 2010-04-22
- 发明人: Martin Popp , Till Schloesser
- 申请人: Martin Popp , Till Schloesser
- 申请人地址: DE Munich
- 专利权人: QIMONDA AG
- 当前专利权人: QIMONDA AG
- 当前专利权人地址: DE Munich
- 主分类号: G11C5/06
- IPC分类号: G11C5/06 ; G11C11/24
摘要:
An integrated circuit including a memory cell array comprises active area lines, bitlines, the bitlines being arranged so that an individual one intersects a plurality of the active area lines to form bitline-contacts, respectively, the bitlines being arranged at a bitline pitch, wordlines being arranged so that an individual one of the wordlines intersects a plurality of the active area lines, and an individual one of the wordlines intersects a plurality of the bitlines, the wordlines being arranged at a wordline pitch, wherein neighboring bitline-contacts, each of which is connected to one of the active area lines, are connected with different bitlines, and the bitline pitch is different from the wordline pitch.
公开/授权文献
- US08294188B2 4 F2 memory cell array 公开/授权日:2012-10-23
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