发明申请
US20100102308A1 PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER 有权
具有氧化层的可编程电阻记忆体

PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER
摘要:
Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
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