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公开(公告)号：US20130009126A1
公开(公告)日：2013-01-10
申请号：US13615830
申请日：2012-09-14
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2463 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/1608 , H01L45/1675
摘要： A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed.
摘要翻译： 包括有源电极的可编程金属化电池（PMC）; 设置在所述有源电极上的纳米多孔层，所述纳米多孔层包含多个纳米孔和电介质材料; 以及设置在纳米多孔层上的惰性电极。 其它实施方案包括由碘化银，碘化铜，硫化银，硫化铜，硒化银或硒化铜形成活性电极，并向活性电极施加正偏压，使活性电极引起银或铜迁移到纳米孔中。 还公开了形成方法。
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公开(公告)号：US20100102308A1
公开(公告)日：2010-04-29
申请号：US12390711
申请日：2009-02-23
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
摘要翻译： 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。
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3.发明授权公开(公告)号：US07750386B2
公开(公告)日：2010-07-06
申请号：US12269507
申请日：2008-11-12
申请人： Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
发明人： Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
IPC分类号： H01L29/76 , H01L21/8242
CPC分类号： H01L27/2472 , H01L21/76816 , H01L23/5226 , H01L27/228 , H01L27/2436 , H01L43/08 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer.
摘要翻译： 一种存储单元，包括具有第一表面和相对的第二表面的第一触点; 具有第一表面和相对的第二表面的第二触点; 存储材料层，其具有第一表面和相对的第二表面; 以及具有第一表面和相对的第二表面的纳米多孔层，所述纳米多孔层包括至少一个纳米孔和介电材料，所述至少一个纳米孔基本上被导电金属填充，其中所述纳米多孔层的表面与 第一接触面或第二接触面的表面和纳米多孔层的第二表面与记忆材料层的表面接触。
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公开(公告)号：US08343801B2
公开(公告)日：2013-01-01
申请号：US13278240
申请日：2011-10-21
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
摘要翻译： 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。
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公开(公告)号：US20120040496A1
公开(公告)日：2012-02-16
申请号：US13278240
申请日：2011-10-21
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
IPC分类号： H01L21/8239
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
摘要翻译： 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。
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公开(公告)号：US08058646B2
公开(公告)日：2011-11-15
申请号：US12390711
申请日：2009-02-23
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
IPC分类号： H01L29/12
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
摘要翻译： 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。
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公开(公告)号：US20100117052A1
公开(公告)日：2010-05-13
申请号：US12269514
申请日：2008-11-12
CPC分类号： H01L45/146 , H01L27/2463 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/1608 , H01L45/1675
摘要： A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed.
摘要翻译： 包括有源电极的可编程金属化电池（PMC）; 设置在所述有源电极上的纳米多孔层，所述纳米多孔层包含多个纳米孔和电介质材料; 以及设置在纳米多孔层上的惰性电极。 其它实施方案包括由碘化银，碘化铜，硫化银，硫化铜，硒化银或硒化铜形成活性电极，并向活性电极施加正偏压，使活性电极引起银或铜迁移到纳米孔中。 还公开了形成方法。
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公开(公告)号：US08435827B2
公开(公告)日：2013-05-07
申请号：US13348255
申请日：2012-01-11
申请人： Venkatram Venkatasamy , Ming Sun , Dadi Setiadi
发明人： Venkatram Venkatasamy , Ming Sun , Dadi Setiadi
IPC分类号： H01L21/00
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/16 , H01L45/1608
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. A sacrificial metal is disposed between the electrochemically active electrode and the inert electrode. The sacrificial metal has a more negative standard electrode potential than the filament forming metal.
摘要翻译： 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 牺牲金属设置在电化学活性电极和惰性电极之间。 牺牲金属具有比成丝金属更负的标准电极电位。
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公开(公告)号：US20120080317A1
公开(公告)日：2012-04-05
申请号：US12894238
申请日：2010-09-30
CPC分类号： C25D3/562 , C09D1/00 , C09D5/4488
摘要： A method of forming CoNiP on a substrate that includes the steps of placing a substrate in an electroplating bath, the electroplating bath containing an electroplating composition, the electroplating composition including: a nickel source; a cobalt source; and at least about 0.1 M phosphorus source; and applying a deposition current to the substrate, wherein application of the deposition current to the substrate will cause a CoNiP layer having a thickness of at least about 500 nanometers to be electrodeposited on the substrate.
摘要翻译： 一种在衬底上形成CoNiP的方法，包括将衬底放置在电镀浴中的步骤，所述电镀浴含有电镀组合物，所述电镀组合物包括：镍源; 钴源; 和至少约0.1M磷源; 以及向衬底施加沉积电流，其中将沉积电流施加到衬底将使得具有至少约500纳米厚度的CoNiP层电沉积在衬底上。
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公开(公告)号：US20120032131A1
公开(公告)日：2012-02-09
申请号：US13278245
申请日：2011-10-21
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
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