发明申请
- 专利标题： ZNO-Based Semiconductor Element
- 专利标题（中）： ZNO型半导体元件
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申请号： US12525537申请日： 2008-02-04
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公开(公告)号： US20100102309A1公开(公告)日： 2010-04-29
- 发明人: Ken Nakahara , Hiroyuki Yuji , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki , Tomoteru Fukumura , Masaki Nakano
- 申请人： Ken Nakahara , Hiroyuki Yuji , Masashi Kawasaki , Akira Ohtomo , Atsushi Tsukazaki , Tomoteru Fukumura , Masaki Nakano
- 申请人地址： JP Kyoto
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto
- 优先权： JP2007-024702 20070202; JP2008-021953 20080131
- 国际申请： PCT/JP2008/051790 WO 20080204
- 主分类号： H01L29/221
- IPC分类号： H01L29/221
摘要：
To solve the foregoing problems, provided is a ZnO-based semiconductor element having an entirely novel function distinct from hitherto, using a ZnO-based semiconductor and organic matter for an active role. An organic electrode 2 is formed on a ZnO-based semiconductor 1, and an Au film 3 is formed on the organic electrode 2. An electrode formed of a multilayer metal film including a Ti film 4 and an Au film 5 is formed on the back surface of the ZnO-based semiconductor 1 so as to be opposed to the organic electrode 2. A bonding interface between the organic electrode 2 and the ZnO-based semiconductor 1 is in a pn junction-like state. Thus, rectification occurs therebetween.
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