- 专利标题： MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 磁性元件及其制造方法
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申请号： US12556389申请日： 2009-09-09
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公开(公告)号： US20100102407A1公开(公告)日： 2010-04-29
- 发明人: Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano , Kuniaki Sugiura
- 申请人： Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano , Kuniaki Sugiura
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-273276 20081023
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.
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