公开(公告)号：US08058080B2

公开(公告)日：2011-11-15

申请号：US12699721

申请日：2010-02-03

申请人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Minoru Amano ,  Shigeki Takahashi ,  Masayoshi Iwayama ,  Kuniaki Sugiura

发明人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Minoru Amano ,  Shigeki Takahashi ,  Masayoshi Iwayama ,  Kuniaki Sugiura

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/228

摘要： A magnetic material of a magnetoresistive element is formed on a lower electrode. An upper electrode is formed on the magnetic material. A resist for nano-imprint lithography is formed on the upper electrode. A first pattern or a second pattern is formed in the resist by setting a first template or a second template into contact with the resist and curing the resist. The first template has the first pattern that corresponds to the magnetoresistive element and the lower electrode. The second template has the second pattern that corresponds to the magnetoresistive element and the upper electrode. The magnetic material and the lower electrode are patterned at the same time by using the resist having the first pattern, or the magnetic material and the upper electrode are patterned at the same time by using the resist having the second pattern.

摘要翻译： 磁阻元件的磁性材料形成在下电极上。 在磁性材料上形成上部电极。 在上电极上形成用于纳米压印光刻的抗蚀剂。 通过将第一模板或第二模板与抗蚀剂接触并固化抗蚀剂，在抗蚀剂中形成第一图案或第二图案。 第一模板具有对应于磁阻元件和下电极的第一图案。 第二模板具有对应于磁阻元件和上电极的第二图案。 通过使用具有第一图案的抗蚀剂，同时对磁性材料和下部电极进行图案化，或者通过使用具有第二图案的抗蚀剂同时对磁性材料和上部电极进行图案化。

公开(公告)号：US20100102407A1

公开(公告)日：2010-04-29

申请号：US12556389

申请日：2009-09-09

申请人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano ,  Kuniaki Sugiura

发明人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano ,  Kuniaki Sugiura

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.

摘要翻译： 磁阻元件包括堆叠结构，其包括具有固定磁化方向的固定层，具有可变磁化方向的记录层和夹在固定层和记录层之间的非磁性层，覆盖周向表面的第一保护膜 层叠结构，由氮化硅制成，第二保护膜覆盖第一保护膜的周面，由氮化硅构成。 第一保护膜中的氢含量不大于4原子％，第二保护膜中的氢含量不低于6原子％。

公开(公告)号：US20100097846A1

公开(公告)日：2010-04-22

申请号：US12563465

申请日：2009-09-21

申请人： Kuniaki Sugiura ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano

发明人： Kuniaki Sugiura ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano

IPC分类号： G11C11/02 ,  H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/12

摘要： A magnetic memory includes an interlayer insulation layer provided on a substrate, a conductive underlying layer provided on the interlayer insulation layer, and a magnetoresistive element provided on the underlying layer and including two magnetic layers and a nonmagnetic layer interposed between the magnetic layers. The underlying layer has an etching rate lower than an etching rate of each of the magnetic layers.

摘要翻译： 磁存储器包括设置在基板上的层间绝缘层，设置在层间绝缘层上的导电性底层，以及设置在下层上的磁阻元件，并且包括两个磁性层和介于该磁性层之间的非磁性层。 下层具有比每个磁性层的蚀刻速率低的蚀刻速率。

公开(公告)号：US08081505B2

公开(公告)日：2011-12-20

申请号：US12556389

申请日：2009-09-09

申请人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano ,  Kuniaki Sugiura

发明人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano ,  Kuniaki Sugiura

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.

摘要翻译： 磁阻元件包括堆叠结构，其包括具有固定磁化方向的固定层，具有可变磁化方向的记录层和夹在固定层和记录层之间的非磁性层，覆盖周向表面的第一保护膜 层叠结构，由氮化硅制成，第二保护膜覆盖第一保护膜的周面，由氮化硅构成。 第一保护膜中的氢含量不大于4原子％，第二保护膜中的氢含量不低于6原子％。

公开(公告)号：US06717845B2

公开(公告)日：2004-04-06

申请号：US10345253

申请日：2003-01-16

申请人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

发明人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

IPC分类号： G11C1115

CPC分类号： G11C11/16

摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first wiring extending in a first direction on or below the magnetoresistance effect element; a covering layer provided at least both sides of the first wiring, the covering layer being made of magnetic material, and the covering layer having a uniaxial anisotropy in the first direction along which a magnetization of the covering layer occurs easily; and a writing circuit configured to pass a current through the first wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

摘要翻译： 磁存储器包括：具有磁记录层的磁阻效应元件; 在所述磁阻效应元件上或第二方向上延伸的第一布线; 所述覆盖层至少设置在所述第一布线的两侧，所述覆盖层由磁性材料制成，所述覆盖层在容易发生所述覆盖层的磁化的第一方向上具有单轴各向异性; 以及写入电路，被配置为使电流通过第一布线，以便通过由电流产生的磁场将信息记录在磁记录层中。

公开(公告)号：US06873023B2

公开(公告)日：2005-03-29

申请号：US10418047

申请日：2003-04-18

申请人： Yoshiaki Asao ,  Yoshihisa Iwata ,  Yoshiaki Saito ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi

发明人： Yoshiaki Asao ,  Yoshihisa Iwata ,  Yoshiaki Saito ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi

IPC分类号： G11C11/16 ,  H01L43/00

CPC分类号： G11C11/16

摘要： A write word line is disposed right under an MTJ element. The write word line extends in an X direction, and a lower surface of the line is coated with a yoke material which has a high permeability. A data selection line (read/write bit line) is disposed right on the MTJ element. A data selection line extends in a Y direction intersecting with the X direction, and an upper surface of the line is coated with the yoke material which has the high permeability. At a write operation time, a magnetic field generated by a write current flowing through a write word line B and data selection line functions on the MTJ element by the yoke material with good efficiency.

摘要翻译： 写字线被放置在MTJ元素的正下方。 写字线在X方向上延伸，并且线的下表面涂覆有具有高磁导率的磁轭材料。 数据选择线（读/写位线）设置在MTJ元件上。 数据选择线在与X方向交叉的Y方向上延伸，并且线的上表面涂覆有具有高磁导率的磁轭材料。 在写操作时刻，通过写入字线B和数据选择线产生的写入电流产生的磁场通过磁轭材料以良好的效率在MTJ元件上起作用。

公开(公告)号：US06831857B2

公开(公告)日：2004-12-14

申请号：US10329417

申请日：2002-12-27

申请人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

发明人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

IPC分类号： G11C1115

CPC分类号： G11C11/15

摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.

公开(公告)号：US06934184B2

公开(公告)日：2005-08-23

申请号：US10893915

申请日：2004-07-20

申请人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

发明人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08

CPC分类号： G11C11/15

摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.

摘要翻译： 在用于存储单元的磁阻效应元件的存储层中，高度可靠的磁存储器在高存储密度下表现出增强的数据保持稳定性。 磁存储器包括具有第一布线的存储单元阵列，与第一布线相交的第二布线和各自设置在相应的第一布线和第二布线的交叉区域的存储单元。 当选择对应的第一和第二布线时，选择每个存储单元。 每个存储单元包括磁阻效应元件，其具有存储层，其中当电流流过所选择的第一和第二布线时，通过产生的磁场来存储数据;第一磁性构件，具有设置为部分地包围每个第一布线的两端， 端部位于容易的磁化轴的方向上，以形成具有存储层的闭环磁路，以及具有两端的第二磁性构件，其设置为部分地包围每个第二布线，并且两端位于 磁化强度轴的方向，放大沿着硬磁化轴的方向施加到存储层的磁场。 第一磁性构件的每个端部被定位成比第二磁性构件的每个端部更靠近存储层。

公开(公告)号：US07333359B2

公开(公告)日：2008-02-19

申请号：US10419873

申请日：2003-04-22

申请人： Yoshiaki Asao ,  Yoshihisa Iwata ,  Yoshiaki Saito ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi

发明人： Yoshiaki Asao ,  Yoshihisa Iwata ,  Yoshiaki Saito ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi

IPC分类号： G11C11/00

CPC分类号： B82Y25/00 ,  G11C11/16 ,  H01F10/06 ,  H01F10/3254

摘要： A write word line is disposed right under a MTJ element. The write word line extends in an X direction, and side and lower surfaces of the write word line are coated with a hard magnetic material and yoke material. The hard magnetic material is magnetized by a surplus current passed through the write word line, and a characteristic of the MTJ element is corrected by residual magnetization. A data selection line (read/write bit line) is disposed right on the MTJ element. The data selection line extends in a Y direction intersecting with the X direction, and a part of the surface of the data selection line is coated with the yoke material.

摘要翻译： 写字线被放置在MTJ元素的正下方。 写字线在X方向上延伸，并且写字线的侧表面和下表面涂覆有硬磁材料和轭材料。 硬磁材料被通过写入字线的剩余电流磁化，并且通过剩余磁化来校正MTJ元件的特性。 数据选择线（读/写位线）设置在MTJ元件上。 数据选择线在与X方向相交的Y方向上延伸，并且数据选择线的表面的一部分涂覆有轭材料。

公开(公告)号：US20050274984A1

公开(公告)日：2005-12-15

申请号：US11152411

申请日：2005-06-15

申请人： Keiji Hosotani ,  Yoshiaki Asao ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi ,  Yoshihisa Iwata

发明人： Keiji Hosotani ,  Yoshiaki Asao ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi ,  Yoshihisa Iwata

IPC分类号： H01L27/105 ,  H01L21/768 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  H01L27/10

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L21/76895 ,  H01L43/08

摘要： A semiconductor integrated circuit device includes a cell transistor; a bit line provided above the cell transistor; a magnetoresistive element provided above the bit line, a first end portion of the magnetoresistive element being electrically connected to the bit line; an intracell local interconnection provided above the magnetoresistive element, the intracell local interconnection coupling one of source and drain regions of the cell transistor to a second end portion of the magnetoresistive element; and a write word line provided above the intracell local interconnection, a portion between the write word line and the intracell local interconnection being filled with an insulator alone.