发明申请
US20100104892A1 ALUMINUM-NITRIDE-BASED COMPOSITE MATERIAL, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR A SEMICONDUCTOR MANUFACTURING APPARATUS 有权
基于氮化铝的复合材料,其制造方法和半导体制造装置的构件

ALUMINUM-NITRIDE-BASED COMPOSITE MATERIAL, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR A SEMICONDUCTOR MANUFACTURING APPARATUS
摘要:
The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×1014 Ω·cm or higher.
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