发明申请
- 专利标题: ALUMINUM-NITRIDE-BASED COMPOSITE MATERIAL, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR A SEMICONDUCTOR MANUFACTURING APPARATUS
- 专利标题(中): 基于氮化铝的复合材料,其制造方法和半导体制造装置的构件
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申请号: US12581307申请日: 2009-10-19
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公开(公告)号: US20100104892A1公开(公告)日: 2010-04-29
- 发明人: Yoshimasa KOBAYASHI , Akira Goto , Yuji Katsuda , Naohito Yamada
- 申请人: Yoshimasa KOBAYASHI , Akira Goto , Yuji Katsuda , Naohito Yamada
- 申请人地址: JP Nagoya-City
- 专利权人: NGK Insulators, Ltd.
- 当前专利权人: NGK Insulators, Ltd.
- 当前专利权人地址: JP Nagoya-City
- 优先权: JP2009-072305 20090324; JP2009-216178 20090917
- 主分类号: B32B18/00
- IPC分类号: B32B18/00 ; C04B35/582 ; C04B35/04
摘要:
The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×1014 Ω·cm or higher.