发明申请
- 专利标题: FORMING METHOD OF AMORPHOUS CARBON FILM, AMORPHOUS CARBON FILM, MULTILAYER RESIST FILM, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND COMPUTER-READABLE STORAGE MEDIUM
- 专利标题(中): 非晶碳膜,非晶碳膜,多层耐蚀膜,半导体器件的制造方法和计算机可读存储介质的形成方法
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申请号: US12528847申请日: 2008-02-21
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公开(公告)号: US20100105213A1公开(公告)日: 2010-04-29
- 发明人: Hiraku Ishikawa , Tadakazu Murai , Eisuke Morisaki
- 申请人: Hiraku Ishikawa , Tadakazu Murai , Eisuke Morisaki
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-049185 20070228
- 国际申请: PCT/JP2008/052990 WO 20080221
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L49/02 ; C23C16/26 ; G03F7/00
摘要:
An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.
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