发明申请
US20100105213A1 FORMING METHOD OF AMORPHOUS CARBON FILM, AMORPHOUS CARBON FILM, MULTILAYER RESIST FILM, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND COMPUTER-READABLE STORAGE MEDIUM 有权
非晶碳膜,非晶碳膜,多层耐蚀膜,半导体器件的制造方法和计算机可读存储介质的形成方法

FORMING METHOD OF AMORPHOUS CARBON FILM, AMORPHOUS CARBON FILM, MULTILAYER RESIST FILM, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND COMPUTER-READABLE STORAGE MEDIUM
摘要:
An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.
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