公开(公告)号：US20100105213A1

公开(公告)日：2010-04-29

申请号：US12528847

申请日：2008-02-21

申请人： Hiraku Ishikawa ,  Tadakazu Murai ,  Eisuke Morisaki

发明人： Hiraku Ishikawa ,  Tadakazu Murai ,  Eisuke Morisaki

IPC分类号： H01L21/302 ,  H01L49/02 ,  C23C16/26 ,  G03F7/00

CPC分类号： C23C16/26 ,  C23C16/5096 ,  H01L21/02527 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/31144

摘要： An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.

摘要翻译： 通过使用在处理室内安装有上部电极和下部电极的平行板型等离子体CVD装置进行无定形碳膜形成方法，该方法包括：在下部电极上设置基板; 向处理室供应一氧化碳和惰性气体; 通过向至少上述电极施加高频功率并产生等离子体来分解一氧化碳; 并在基底上沉积无定形碳。 上电极是碳电极是理想的。

公开(公告)号：US08409460B2

公开(公告)日：2013-04-02

申请号：US12528847

申请日：2008-02-21

申请人： Hiraku Ishikawa ,  Tadakazu Murai ,  Eisuke Morisaki

发明人： Hiraku Ishikawa ,  Tadakazu Murai ,  Eisuke Morisaki

IPC分类号： B44C1/22 ,  C23F1/00 ,  C23F3/00

CPC分类号： C23C16/26 ,  C23C16/5096 ,  H01L21/02527 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/31144

摘要： An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.

摘要翻译： 通过使用在处理室内安装有上部电极和下部电极的平行板型等离子体CVD装置进行无定形碳膜形成方法，该方法包括：在下部电极上设置基板; 向处理室供应一氧化碳和惰性气体; 通过向至少上述电极施加高频功率并产生等离子体来分解一氧化碳; 并在基底上沉积无定形碳。 上电极是碳电极是理想的。

公开(公告)号：US08936829B2

公开(公告)日：2015-01-20

申请号：US12864606

申请日：2009-01-19

申请人： Hiraku Ishikawa

发明人： Hiraku Ishikawa

IPC分类号： C23C16/56 ,  H01L21/314 ,  C23C16/26 ,  H01L21/67 ,  H01L21/768

CPC分类号： H01L21/3146 ,  C23C16/26 ,  C23C16/56 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76835 ,  H01L2221/1036

摘要： Functional groups on the outermost surface of an amorphous hydrocarbon film are substituted. The amorphous hydrocarbon film is formed on a silicon substrate Sub, which is coated with a low-k film. A heat treatment is performed on the amorphous hydrocarbon film in a non-silane gas atmosphere. Next, a heat treatment is performed on the amorphous hydrocarbon film in a silane gas atmosphere immediately after the heat treatment in a non-silane gas atmosphere. After the heat treatment, a film, such as a hard mask, is formed.

摘要翻译： 取代无定形烃膜的最外表面上的官能团。 无定形烃膜形成在涂覆有低k膜的硅衬底Sub上。 在非硅烷气体气氛中对无定形烃膜进行热处理。 接下来，在非硅烷气体气氛中的热处理后立即对硅烷气体气氛中的无定形烃膜进行热处理。 在热处理之后，形成诸如硬掩模的膜。

公开(公告)号：US20100243999A1

公开(公告)日：2010-09-30

申请号：US12675351

申请日：2008-08-26

申请人： Hiraku Ishikawa

发明人： Hiraku Ishikawa

IPC分类号： H01L51/52 ,  H01L51/56 ,  B32B43/00 ,  C23C16/513 ,  C23C16/511 ,  B05C11/00 ,  B32B9/04

CPC分类号： H01L51/56 ,  C23C16/345 ,  C23C16/45523 ,  H01L51/5256

摘要： An organic element is protected by a protection film which has high sealing performance while relaxing a stress and does not change the characteristics of the organic element. In a substrate processing system Sys, a substrate processing apparatus 10, which includes a deposition apparatus PM1, a first microwave plasma processing apparatus PM3, and a second microwave plasma processing apparatus PM4, is arranged in a cluster structure, and an organic electronic device is manufactured by keeping a space where a substrate G moves from carry-in to carry-out in a desired depressurized state. An organic EL element is formed by the deposition apparatus PM1, butyne gas is plasmatized by microwave power by the first microwave plasma processing apparatus PM3, and an aCHx film 54 is formed adjacent to the organic EL element to cover the organic EL element. Then, silane gas and nitrogen gas are plasmatized by microwave power by the second microwave plasma processing apparatus PM4, and a SiNx film 55 is formed on the aCHx film 54.

摘要翻译： 有机元素由保护膜保护，该保护膜在放松应力的同时具有高密封性能，并且不改变有机元素的特性。 在基板处理系统Sys中，将具有沉积装置PM1，第一微波等离子体处理装置PM3和第二微波等离子体处理装置PM4的基板处理装置10配置为簇结构，有机电子装置 通过保持基板G从携带状态移动到所需的减压状态进行的空间来制造。 由沉积装置PM1形成有机EL元件，通过第一微波等离子体处理装置PM3对微波功率进行等离子体化，并且与有机EL元件相邻地形成有覆盖有机EL元件的aCHx膜54。 然后，通过第二微波等离子体处理装置PM4通过微波功率使硅烷气体和氮气等离子化，在aCHx膜54上形成SiNx膜55。

公开(公告)号：US6157083A

公开(公告)日：2000-12-05

申请号：US864388

申请日：1997-05-28

申请人： Tatsuya Usami ,  Hiraku Ishikawa

发明人： Tatsuya Usami ,  Hiraku Ishikawa

IPC分类号： H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/02131 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76819 ,  H01L23/5329 ,  H01L23/53295 ,  H01L21/76834 ,  H01L2924/0002

摘要： A semiconductor device is manufactured by forming a first fluorine doped plasma silicon oxide film having a high fluorine concentration on first metallic interconnections formed on a semiconductor substrate surface, forming, a second fluorine doped plasma silicon oxide film having a low fluorine concentrations on the first film, and carrying out chemical machine polishing (CMP) only on the second fluorine doped plasma silicon oxide film.

摘要翻译： 通过在形成在半导体衬底表面上的第一金属互连上形成具有高氟浓度的第一氟掺杂等离子体氧化硅膜来形成半导体器件，在第一膜上形成具有低氟浓度的第二氟掺杂等离子体氧化硅膜 ，并且仅在第二氟掺杂等离子体氧化硅膜上进行化学机械抛光（CMP）。

公开(公告)号：US5633208A

公开(公告)日：1997-05-27

申请号：US352155

申请日：1994-12-01

申请人： Hiraku Ishikawa

发明人： Hiraku Ishikawa

IPC分类号： H01L21/3205 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/465

CPC分类号： H01L21/02164 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/31051 ,  H01L21/31612

摘要： A planarization method comprises forming on an uneven surface an silicon oxide film having a low wettingness at least on its surface. The low wettingness of the silicon oxide film is obtained by increasing the silicon/oxygen atom ratio by means of argon sputtering or plasma CVD method. A silica solution is subsequently spin-coated onto the silicon oxide film. Since the surface of the silicon oxide film has a low wettingness, more of the coated silica solution stands on recessed portions than on raised portions, resulting in a flat surface of the coated solution. After the coated silica solution has been hardened, etching-back can be carried out until the coated silica solution is completely removed, thereby achieving the planarized surface of the silicon oxide film.

摘要翻译： 平面化方法包括在不平坦表面上形成至少在其表面上具有低润湿性的氧化硅膜。 氧化硅膜的低润湿性通过使用氩气溅射或等离子体CVD法提高硅/氧原子比来获得。 随后将二氧化硅溶液旋涂到氧化硅膜上。 由于氧化硅膜的表面的润湿性低，所以涂布的二氧化硅溶液比凸起部分更多地位于凹部上，导致涂布液的平坦表面。 在涂覆的二氧化硅溶液已经硬化之后，可以进行回蚀，直到被涂覆的二氧化硅溶液被完全除去，从而实现氧化硅膜的平坦化表面。

公开(公告)号：US08262844B2

公开(公告)日：2012-09-11

申请号：US12529424

申请日：2008-02-26

申请人： Hiraku Ishikawa ,  Yasuhiro Tobe

发明人： Hiraku Ishikawa ,  Yasuhiro Tobe

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： C23C16/511 ,  H01J37/32192 ,  H01J37/3266

摘要： Provided is a plasma processing apparatus including a processing vessel accommodating a target object; a microwave generator configured to generate a microwave; a waveguide configured to induce the microwave to the processing vessel; a planar antenna having a plurality of microwave radiation holes through which the microwave induced to the waveguide is radiated toward the processing vessel; a microwave transmission plate configured to serve as a ceiling wall of the processing vessel and transmit the microwave passed from the microwave radiation holes of the planar antenna; a processing gas inlet unit configured to introduce a processing gas into the processing vessel; and a magnetic field generating unit positioned above the planar antenna and configured to generate a magnetic field within the processing vessel and control a property of plasma of the processing gas by the magnetic field, the plasma being generated by the microwave within the processing vessel.

摘要翻译： 提供一种等离子体处理装置，其包括容纳目标物体的处理容器; 构造成产生微波的微波发生器; 波导，被配置为将微波引导到处理容器; 具有多个微波辐射孔的平面天线，通过所述多个微波辐射孔向所述处理容器辐射所述波导引起的微波; 构造成用作处理容器的顶壁并传输从平面天线的微波辐射孔通过的微波的微波传输板; 处理气体入口单元，被配置为将处理气体引入所述处理容器中; 以及磁场产生单元，其位于所述平面天线的上方，并且被配置为在所述处理容器内产生磁场，并且通过所述磁场控制所述处理气体的等离子体的性质，所述等离子体由所述微波在所述处理容器内产生。

公开(公告)号：US20110201206A1

公开(公告)日：2011-08-18

申请号：US13060821

申请日：2009-08-04

申请人： Hiraku Ishikawa ,  Eiichi Nishimura

发明人： Hiraku Ishikawa ,  Eiichi Nishimura

IPC分类号： H01L21/311 ,  B32B13/04 ,  C01C3/00 ,  H01L21/31

CPC分类号： H01L21/31144 ,  C23C16/347 ,  C23C16/5096 ,  G03F7/091 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/3146 ,  H01L21/318

摘要： An amorphous carbon film, which has excellent etching resistance and is capable of reducing reflectance when a resist film is exposed to light, is form. A method for manufacturing a semiconductor device includes forming an object film to be etched on a wafer, supplying a process gas containing a CO gas and an N2 gas into a processing container, forming an amorphous carbon nitride film from the supplied CO gas and N2 gas, forming a silicon oxide film on the amorphous carbon nitride film, forming an ArF resist film on the silicon oxide film, patterning the ArF resist film, etching the silicon oxide film by using the ArF resist film as a mask, etching the amorphous carbon nitride film by using the silicon oxide film as a mask, and etching the object film to be etched by using the amorphous carbon nitride film as a mask.

摘要翻译： 形成了具有优异的耐蚀刻性并且当抗蚀剂膜暴露于光时能够降低反射率的无定形碳膜。 一种制造半导体器件的方法包括在晶片上形成待蚀刻的目标薄膜，将含有CO气体和N 2气体的工艺气体供给到处理容器中，从供给的CO气体和N 2气体形成无定形氮化碳膜 在无定形氮化碳膜上形成氧化硅膜，在氧化硅膜上形成ArF抗蚀剂膜，对ArF抗蚀剂膜进行构图，使用ArF抗蚀剂膜作为掩模蚀刻氧化硅膜，蚀刻无定形碳氮化物 通过使用氧化硅膜作为掩模，并且通过使用无定形氮化碳膜作为掩模来蚀刻待蚀刻的目标膜。

公开(公告)号：US20100032838A1

公开(公告)日：2010-02-11

申请号：US12516862

申请日：2007-11-30

申请人： Yoshiyuki Kikuchi ,  Yasuo Kobayashi ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Hiraku Ishikawa

发明人： Yoshiyuki Kikuchi ,  Yasuo Kobayashi ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Hiraku Ishikawa

IPC分类号： H01L23/532 ,  H01L21/314 ,  C09D1/00

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02123 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/76811 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed.

摘要翻译： 本发明提供一种具有高弹性模量和低收缩率以及低介电常数的非晶碳膜，包括非晶碳膜的半导体器件和用于形成非晶碳膜的技术。 由于通过在成膜期间控制Si（硅）的添加量来形成无定形碳膜，所以可以形成具有高的弹性模量和低热收缩率的无定形碳膜，其介电常数低至3.3 或更少。 因此，当在半导体器件中使用无定形碳膜作为膜时，可以抑制诸如膜剥离的问题。

公开(公告)号：US5882975A

公开(公告)日：1999-03-16

申请号：US711914

申请日：1996-09-12

申请人： Hiraku Ishikawa

发明人： Hiraku Ishikawa

IPC分类号： H01L29/78 ,  C23C16/40 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/335

CPC分类号： H01L21/02071 ,  C23C16/402 ,  H01L29/665 ,  H01L29/6659

摘要： The method of fabricating a semiconductor device includes the steps of (a) forming a metal film over a semiconductor substrate including a gate electrode on a surface thereof, an insulating sidewall covering a side surface of the gate electrode therewith, and source and drain regions formed therein, (b) forming a metal silicide film both on the gate electrode and the source and drain regions by thermally treating the semiconductor substrate to cause the metal film to react with silicon, and (c) etching out a non-silicided portion of the metal film, and further includes the step of (d) removing a portion of the non-silicided portion remaining non-etched or the metal film, by means of plasma-enhanced chemical vapor deposition. The step (d) may be carried out between the steps (a) and (b), between the steps (b) and (c), or after the step (c). The method is applied to a salicide structure semiconductor device, and makes it possible to completely remove a metal film or a metal silicide film formed on a sidewall by virtue of etching performance of plasma-enhanced CVD to thereby prevent occurrence of short-circuit between a gate electrode and source/drain regions without causing reduction in a thickness of a silicide film and side-etching of a silicide film.

摘要翻译： 制造半导体器件的方法包括以下步骤：（a）在其表面上包括栅电极的半导体衬底上形成金属膜，覆盖栅电极的侧表面的绝缘侧壁以及形成的源区和漏区 （b）通过对半导体衬底进行热处理以使金属膜与硅反应，在栅电极和源漏区上形成金属硅化物膜，（c）蚀刻出非硅化物部分， 金属膜，并且还包括通过等离子体增强化学气相沉积（d）去除残留未蚀刻的部分非硅化部分或金属膜的步骤。 步骤（d）可以在步骤（a）和（b）之间，步骤（b）和（c）之间，或在步骤（c）之后进行。 该方法应用于自对准硅化物结构半导体器件，并且借助于等离子体增强CVD的蚀刻性能，可以完全去除形成在侧壁上的金属硅化物膜，从而防止发生短路 栅电极和源极/漏极区，而不会导致硅化物膜的厚度减小和硅化物膜的侧蚀刻。