发明申请
- 专利标题： PATTERNING METHOD
- 专利标题（中）： 绘图方法
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申请号： US12441741申请日： 2008-06-06
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公开(公告)号： US20100112796A1公开(公告)日： 2010-05-06
- 发明人: Pao-Hwa Chou , Kazuhide Hasebe , Shigeru Nakajima , Yasushi Akasaka , Mitsuaki Iwashita , Reiji Niino
- 申请人： Pao-Hwa Chou , Kazuhide Hasebe , Shigeru Nakajima , Yasushi Akasaka , Mitsuaki Iwashita , Reiji Niino
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-151065 20070607
- 国际申请： PCT/JP2008/060480 WO 20080606
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/3213
摘要：
Disclosed is a patterning method including: forming, on a thin film, a sacrificial film made of a material different from that of the thin film and made of SiBN; processing the sacrificial film into a pattern having a preset interval by using a photolithography technique; forming, on sidewalls of the processed sacrificial film, sidewall spacers made of a material different from those of the sacrificial film and the thin film; removing the processed sacrificial film; and processing the thin film by using the sidewall spacers as a mask.
公开/授权文献
- US07754622B2 Patterning method utilizing SiBN and photolithography 公开/授权日：2010-07-13
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