发明申请
- 专利标题： METROLOGY FOR GST FILM THICKNESS AND PHASE
- 专利标题（中）： GST薄膜厚度和相位的方法
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申请号： US12267526申请日： 2008-11-07
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公开(公告)号： US20100116990A1公开(公告)日： 2010-05-13
- 发明人: Kun Xu , Feng Q. Liu , Yuchun Wang , Abraham Ravid , Wen-Chiang Tu
- 申请人： Kun Xu , Feng Q. Liu , Yuchun Wang , Abraham Ravid , Wen-Chiang Tu
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： G01J5/02
- IPC分类号： G01J5/02 ; G01T1/24
摘要：
Methods of determining thickness and phase of a GST layer on a semiconductor substrate are described using intensity spectra within the infra-red range. In particular, techniques for using certain transmission at certain frequencies are disclosed for faster thickness and phase determination in an in-line or standalone metrology/monitoring system for CMP processes.
公开/授权文献
- US08639377B2 Metrology for GST film thickness and phase 公开/授权日：2014-01-28
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