发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US12559865申请日： 2009-09-15
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公开(公告)号： US20100117137A1公开(公告)日： 2010-05-13
- 发明人: Yoshiaki FUKUZUMI , Masaru KITO , Ryota KATSUMATA , Masaru KIDOH , Hiroyasu TANAKA , Yosuke KOMORI , Megumi ISHIDUKI , Hideaki AOCHI
- 申请人： Yoshiaki FUKUZUMI , Masaru KITO , Ryota KATSUMATA , Masaru KIDOH , Hiroyasu TANAKA , Yosuke KOMORI , Megumi ISHIDUKI , Hideaki AOCHI
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-287807 20081110
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/336
摘要：
Each of memory strings is provided with a first semiconductor layer having a pair of columnar portions extending in a perpendicular direction with respect to a substrate; a charge storage layer formed to surround a side surface of the columnar portions; and a first conductive layer formed to surround the charge storage layer. Each of the select transistors is provided with a second semiconductor layer extending upwardly from an upper surface of the columnar portions; a gate insulating layer formed to surround a side surface of the second semiconductor layer; and a second conductive layer formed to surround the gate insulating layer. An effective impurity concentration of the second semiconductor layer is less than or equal to an effective impurity concentration of the first semiconductor layer.
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